KHB3D0N90F1 Todos los transistores

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KHB3D0N90F1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KHB3D0N90F1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 43 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 65 nS

Conductancia de drenaje-sustrato (Cd): 63 pF

Resistencia drenaje-fuente RDS(on): 4 Ohm

Empaquetado / Estuche: TO220IS

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KHB3D0N90F1 Datasheet (PDF)

1.1. khb3d0n90p1_f1_f2.pdf Size:501K _kec

KHB3D0N90F1
KHB3D0N90F1

KHB3D0N90P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB3D0N90P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2 B B 15.95 MAX

3.1. khb3d0n70p_f.pdf Size:1209K _kec

KHB3D0N90F1
KHB3D0N90F1

KHB3D0N70P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES ·VDSS= 700V, ID= 3A ·Drain-Source ON Resistance : RDS(ON)= 3

Otros transistores... KHB1D0N70G , KHB1D9N60D , KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F , KHB3D0N70P , IRF150 , KHB3D0N90F2 , KHB3D0N90P1 , KHB4D0N65F , KHB4D0N65F2 , KHB4D0N65P , KHB4D0N80F1 , KHB4D0N80F2 , KHB4D0N80P1 .

 


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