KHB3D0N90P1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KHB3D0N90P1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 130 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 63 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de KHB3D0N90P1 MOSFET
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KHB3D0N90P1 datasheet
khb3d0n90p1 f1 f2.pdf
KHB3D0N90P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB3D0N90P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2 B B 15.95 M
khb3d0n70p f.pdf
KHB3D0N70P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS= 700V, ID= 3A Drain-Source ON Resistance RDS(ON)
Otros transistores... KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F , KHB3D0N70P , KHB3D0N90F1 , KHB3D0N90F2 , AON7408 , KHB4D0N65F , KHB4D0N65F2 , KHB4D0N65P , KHB4D0N80F1 , KHB4D0N80F2 , KHB4D0N80P1 , KHB4D5N60F , KHB4D5N60F2 .
History: AGM628S | SWP80N08V1 | 2SK1708 | SMF12N65 | H12N60F | SE630K
History: AGM628S | SWP80N08V1 | 2SK1708 | SMF12N65 | H12N60F | SE630K
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