KHB3D0N90P1 Specs and Replacement
Type Designator: KHB3D0N90P1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 63 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO220AB
KHB3D0N90P1 substitution
KHB3D0N90P1 datasheet
khb3d0n90p1 f1 f2.pdf
KHB3D0N90P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB3D0N90P1 A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ avalanche characteristics. It is mainly suitable for electronic ballast and A 9.9 + 0.2 B B 15.95 M... See More ⇒
khb3d0n70p f.pdf
KHB3D0N70P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS= 700V, ID= 3A Drain-Source ON Resistance RDS(ON)... See More ⇒
Detailed specifications: KHB1D9N60I , KHB2D0N60F , KHB2D0N60F2 , KHB2D0N60P , KHB3D0N70F , KHB3D0N70P , KHB3D0N90F1 , KHB3D0N90F2 , AON7408 , KHB4D0N65F , KHB4D0N65F2 , KHB4D0N65P , KHB4D0N80F1 , KHB4D0N80F2 , KHB4D0N80P1 , KHB4D5N60F , KHB4D5N60F2 .
History: APT53N60BC6 | P0550AT | IRF2804PBF | 2SK2197 | AGM1075-G | AGM01P15E | PJS6832
Keywords - KHB3D0N90P1 MOSFET specs
KHB3D0N90P1 cross reference
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KHB3D0N90P1 substitution
KHB3D0N90P1 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: APT53N60BC6 | P0550AT | IRF2804PBF | 2SK2197 | AGM1075-G | AGM01P15E | PJS6832
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