FDR836P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDR836P
   Código: .836P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 32 nC
   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 570 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: SUPERSOT8

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FDR836P Datasheet (PDF)

..1. Size:79K fairchild semi
fdr836p.pdf

April 1999FDR836PP-Channel 2.5V Specified MOSFETGeneral Description FeaturesSuperSOTTM -8 P-Channel enhancement mode power -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 Vfield effect transistors are produced using FairchildsRDS(ON) = 0.040 W @ VGS = -2.5 Vproprietary, high cell density, DMOS technology. Thisvery high density process is especially tailored to mini- H

9.1. Size:112K fairchild semi
fdr8308p.pdf

November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description FeaturesThe SuperSOT-8 family of P-Channel Logic Level MOSFETs-3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V,have been designed to provide a low profile, small footprint RDS(ON) = 0.070 @ VGS = -2.5 V. alternative to industry standard SO-8 little foot type product.Low gate char

9.2. Size:162K fairchild semi
fdr8305n.pdf

November 1999FDR8305NDual N-Channel 2.5V Specified PowerTrench MOSFETGeneral Description FeaturesThese N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V.process that has been especially tailored to minimize theon-state resis

9.3. Size:204K fairchild semi
fdr838p.pdf

March 1999FDR838PP-Channel 2.5V Specified PowerTrenchTM MOSFETFeaturesGeneral DescriptionThese P-Channel 2.5V specified MOSFETs are produced -8 A, -20 V. RDS(ON) = 0.017 @ VGS = -4.5 Vusing Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.024 @ VGS = -2.5 Vprocess that has been especially tailored to minimize theon-state resistance and yet maintain low g

Otros transistores... FDP7030BL , FDP7030L , FDP7045L , FDP8030L , FDR4410 , FDR4420A , FDR8305N , FDR8308P , IRF640N , FDR838P , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , FDS4435 .

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