FDR838P Todos los transistores

 ..1. Size:204K  fairchild semi
 fdr838p.pdf

March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -8 A, -20 V. RDS(ON) = 0.017 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.024 @ VGS = -2.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low g

 9.1. Size:79K  fairchild semi
 fdr836p.pdf

April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V field effect transistors are produced using Fairchild s RDS(ON) = 0.040 W @ VGS = -2.5 V proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini- H

 9.2. Size:112K  fairchild semi
 fdr8308p.pdf

November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, have been designed to provide a low profile, small footprint RDS(ON) = 0.070 @ VGS = -2.5 V. alternative to industry standard SO-8 little foot type product. Low gate char

 9.3. Size:162K  fairchild semi
 fdr8305n.pdf

November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resis