FDR838P MOSFET Datasheet: P-Ch, 20V, 8A. Full specification with pinout and replacement list

FDR838P Specs and Replacement

   Type Designator: FDR838P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 730 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: SUPERSOT8

FDR838P substitution

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FDR838P datasheet

..1. Size:204K fairchild semi
fdr838p.pdf pdf_icon

March 1999 FDR838P P-Channel 2.5V Specified PowerTrenchTM MOSFET Features General Description These P-Channel 2.5V specified MOSFETs are produced -8 A, -20 V. RDS(ON) = 0.017 @ VGS = -4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.024 @ VGS = -2.5 V process that has been especially tailored to minimize the on-state resistance and yet maintain low g... See More ⇒

9.1. Size:79K fairchild semi
fdr836p.pdf pdf_icon

April 1999 FDR836P P-Channel 2.5V Specified MOSFET General Description Features SuperSOTTM -8 P-Channel enhancement mode power -6.1 A, -20 V. RDS(ON) = 0.030 W @ VGS = -4.5 V field effect transistors are produced using Fairchild s RDS(ON) = 0.040 W @ VGS = -2.5 V proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini- H... See More ⇒

9.2. Size:112K fairchild semi
fdr8308p.pdf pdf_icon

November 1998 FDR8308P Dual P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features The SuperSOT-8 family of P-Channel Logic Level MOSFETs -3.2 A, -20 V. RDS(ON) = 0.050 @ VGS = -4.5 V, have been designed to provide a low profile, small footprint RDS(ON) = 0.070 @ VGS = -2.5 V. alternative to industry standard SO-8 little foot type product. Low gate char... See More ⇒

9.3. Size:162K fairchild semi
fdr8305n.pdf pdf_icon

November 1999 FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced 4.5 A, 20 V. RDS(ON) = 0.022 @ VGS = 4.5 V using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.028 @ VGS = 2.5 V. process that has been especially tailored to minimize the on-state resis... See More ⇒

Detailed specifications: FDP7030L , FDP7045L , FDP8030L , FDR4410 , FDR4420A , FDR8305N , FDR8308P , FDR836P , IRFP260N , FDR8508P , FDR856P , FDR858P , FDS3570 , FDS3580 , FDS4410 , FDS4435 , FDS4435A .