KHB9D0N50F2 Todos los transistores

 

KHB9D0N50F2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KHB9D0N50F2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 44 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 65 nS

Cossⓘ - Capacitancia de salida: 155.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm

Encapsulados: TO220IS

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KHB9D0N50F2 datasheet

 5.1. Size:1317K  kec
 khb9d0n50p1 f1 f2.pdf pdf_icon

KHB9D0N50F2

KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V

 7.1. Size:418K  kec
 khb9d0n90n1.pdf pdf_icon

KHB9D0N50F2

KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin

 7.2. Size:1235K  kec
 khb9d0n90p1 f1.pdf pdf_icon

KHB9D0N50F2

KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I

 7.3. Size:419K  kec
 khb9d0n90na.pdf pdf_icon

KHB9D0N50F2

KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching

MOSTRAR MÁS

Otros transistores... KHB7D0N80P1 , KHB7D5N60F1 , KHB7D5N60F2 , KHB7D5N60P1 , KHB8D8N25F , KHB8D8N25F2 , KHB8D8N25P , KHB9D0N50F1 , TK10A60D , KHB9D0N50P1 , KHB9D0N90F1 , KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P .

History: STD60NF55L-1 | AOL1444 | FIR4N65F | 2SK1154 | SRC60R017FBT4G

 

 

 

 

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