KHB9D0N50F2 Specs and Replacement
Type Designator: KHB9D0N50F2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 155.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220IS
KHB9D0N50F2 substitution
- MOSFET ⓘ Cross-Reference Search
KHB9D0N50F2 datasheet
khb9d0n50p1 f1 f2.pdf
KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V... See More ⇒
khb9d0n90n1.pdf
KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin... See More ⇒
khb9d0n90p1 f1.pdf
KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I... See More ⇒
khb9d0n90na.pdf
KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching... See More ⇒
Detailed specifications: KHB7D0N80P1, KHB7D5N60F1, KHB7D5N60F2, KHB7D5N60P1, KHB8D8N25F, KHB8D8N25F2, KHB8D8N25P, KHB9D0N50F1, TK10A60D, KHB9D0N50P1, KHB9D0N90F1, KHB9D0N90N1, KHB9D0N90NA, KHB9D0N90P1, KHB9D5N20D, KHB9D5N20F2, KHB9D5N20P
Keywords - KHB9D0N50F2 MOSFET specs
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KHB9D0N50F2 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: AOD661
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