All MOSFET. KHB9D0N50F2 Datasheet

 

KHB9D0N50F2 Datasheet and Replacement


   Type Designator: KHB9D0N50F2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 155.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220IS
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KHB9D0N50F2 Datasheet (PDF)

 5.1. Size:1317K  kec
khb9d0n50p1 f1 f2.pdf pdf_icon

KHB9D0N50F2

KHB9D0N50P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N50P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V

 7.1. Size:418K  kec
khb9d0n90n1.pdf pdf_icon

KHB9D0N50F2

KHB9D0N90N1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and_A +15.60 0.20_B4.80 + 0.20switchin

 7.2. Size:1235K  kec
khb9d0n90p1 f1.pdf pdf_icon

KHB9D0N50F2

KHB9D0N90P1/F1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N90P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 900V, I

 7.3. Size:419K  kec
khb9d0n90na.pdf pdf_icon

KHB9D0N50F2

KHB9D0N90NASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and _A +15.60 0.20_B4.80 + 0.20switching

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: P1604ETF | SM7320ESQG | IXFA80N25X3 | SVS5N65FJHD2 | 2SK3917-01MR | SVS11N70MJD2 | 2SK2326

Keywords - KHB9D0N50F2 MOSFET datasheet

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