KHB9D0N90NA Todos los transistores

 

KHB9D0N90NA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KHB9D0N90NA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 183 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.05 Ohm

Encapsulados: TO3PN

 Búsqueda de reemplazo de KHB9D0N90NA MOSFET

- Selecciónⓘ de transistores por parámetros

 

KHB9D0N90NA datasheet

 ..1. Size:419K  kec
 khb9d0n90na.pdf pdf_icon

KHB9D0N90NA

KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching

 4.1. Size:418K  kec
 khb9d0n90n1.pdf pdf_icon

KHB9D0N90NA

KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin

 5.1. Size:1235K  kec
 khb9d0n90p1 f1.pdf pdf_icon

KHB9D0N90NA

KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I

 7.1. Size:1317K  kec
 khb9d0n50p1 f1 f2.pdf pdf_icon

KHB9D0N90NA

KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V

MOSTRAR MÁS

Otros transistores... KHB8D8N25F , KHB8D8N25F2 , KHB8D8N25P , KHB9D0N50F1 , KHB9D0N50F2 , KHB9D0N50P1 , KHB9D0N90F1 , KHB9D0N90N1 , IRFP250 , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P , KQ9N50P , KMB012N30QA , KMB035N40DC , KMB054N40DC .

History: NTTFS4985NF | 2SK1154 | AOL1444 | SRC60R017FBT4G | FIR4N65F

 

 

 

 

↑ Back to Top
.