KHB9D0N90NA PDF and Equivalents Search

 

KHB9D0N90NA Specs and Replacement

Type Designator: KHB9D0N90NA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 183 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm

Package: TO3PN

KHB9D0N90NA substitution

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KHB9D0N90NA datasheet

 ..1. Size:419K  kec
 khb9d0n90na.pdf pdf_icon

KHB9D0N90NA

KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching... See More ⇒

 4.1. Size:418K  kec
 khb9d0n90n1.pdf pdf_icon

KHB9D0N90NA

KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin... See More ⇒

 5.1. Size:1235K  kec
 khb9d0n90p1 f1.pdf pdf_icon

KHB9D0N90NA

KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I... See More ⇒

 7.1. Size:1317K  kec
 khb9d0n50p1 f1 f2.pdf pdf_icon

KHB9D0N90NA

KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V... See More ⇒

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Detailed specifications: KHB8D8N25F, KHB8D8N25F2, KHB8D8N25P, KHB9D0N50F1, KHB9D0N50F2, KHB9D0N50P1, KHB9D0N90F1, KHB9D0N90N1, IRFP250, KHB9D0N90P1, KHB9D5N20D, KHB9D5N20F2, KHB9D5N20P, KQ9N50P, KMB012N30QA, KMB035N40DC, KMB054N40DC

Keywords - KHB9D0N90NA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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