All MOSFET. KHB9D0N90NA Datasheet

 

KHB9D0N90NA MOSFET. Datasheet pdf. Equivalent


   Type Designator: KHB9D0N90NA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 54 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 183 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO3PN

 KHB9D0N90NA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KHB9D0N90NA Datasheet (PDF)

 ..1. Size:419K  kec
 khb9d0n90na.pdf

KHB9D0N90NA KHB9D0N90NA

KHB9D0N90NASEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and _A +15.60 0.20_B4.80 + 0.20switching

 4.1. Size:418K  kec
 khb9d0n90n1.pdf

KHB9D0N90NA KHB9D0N90NA

KHB9D0N90N1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description AThis planar stripe MOSFET has better characteristics, such as fastQ BNO Kswitching time, low on resistance, low gate charge and excellentDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast and_A +15.60 0.20_B4.80 + 0.20switchin

 5.1. Size:1235K  kec
 khb9d0n90p1 f1.pdf

KHB9D0N90NA KHB9D0N90NA

KHB9D0N90P1/F1SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N90P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 900V, I

 7.1. Size:1317K  kec
 khb9d0n50p1 f1 f2.pdf

KHB9D0N90NA KHB9D0N90NA

KHB9D0N50P1/F1/F2SEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB9D0N50P1This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS(Min.)= 500V

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PSMN1R5-40ES

 

 
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