KHB9D5N20D Todos los transistores

 ..1. Size:957K  kec
 khb9d5n20d.pdf

KHB9D5N20D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switch mode pow

 5.1. Size:91K  kec
 khb9d5n20p f f2.pdf

KHB9D5N20P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D5N20P A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for electronic ballast and B B 15.95 MAX

 5.2. Size:2228K  cn vbsemi
 khb9d5n20f.pdf

KHB9D5N20F www.VBsemi.tw N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Isolated Package VDS (V) 200 Available High Voltage Isolation = 2.5 kVRMS (t = 60 s; RDS(on) ( )VGS = 10 V 0.265 f = 60 Hz) RoHS Qg (Max.) (nC) 16 Sink to Lead Creepage Distance = 4.8 mm 175 C Operating Temperature Qgs (nC) 5 Dynamic dV/dt Rating Qgd (nC) 8 Low Thermal Resis

 9.1. Size:418K  kec
 khb9d0n90n1.pdf

KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin

 9.2. Size:1235K  kec
 khb9d0n90p1 f1.pdf

KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 900V, I

 9.3. Size:419K  kec
 khb9d0n90na.pdf

KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching

 9.4. Size:1317K  kec
 khb9d0n50p1 f1 f2.pdf

KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 500V