All MOSFET. KHB9D5N20D Datasheet

 

KHB9D5N20D MOSFET. Datasheet pdf. Equivalent

Type Designator: KHB9D5N20D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 54 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9.5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 62 nS

Drain-Source Capacitance (Cd): 96 pF

Maximum Drain-Source On-State Resistance (Rds): 0.345 Ohm

Package: DPAK

KHB9D5N20D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

KHB9D5N20D Datasheet (PDF)

1.1. khb9d5n20d.pdf Size:957K _kec

KHB9D5N20D
KHB9D5N20D

KHB9D5N20D SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 switch mode pow

1.2. khb9d5n20p f f2.pdf Size:91K _kec

KHB9D5N20D
KHB9D5N20D

KHB9D5N20P/F/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D5N20P A O This planar stripe MOSFET has better characteristics, such as fast C F switching time, low on resistance, low gate charge and excellent E DIM MILLIMETERS G _ A 9.9 + 0.2 avalanche characteristics. It is mainly suitable for electronic ballast and B B 15.95 MAX

 5.1. khb9d0n50p1 f1 f2.pdf Size:1317K _kec

KHB9D5N20D
KHB9D5N20D

KHB9D0N50P1/F1/F2 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS(Min.)= 500V

5.2. khb9d0n90n1.pdf Size:418K _kec

KHB9D5N20D
KHB9D5N20D

KHB9D0N90N1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switchin

 5.3. khb9d0n90na.pdf Size:419K _kec

KHB9D5N20D
KHB9D5N20D

KHB9D0N90NA SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast Q B N O K switching time, low on resistance, low gate charge and excellent DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and _ A + 15.60 0.20 _ B 4.80 + 0.20 switching

5.4. khb9d0n90p1 f1.pdf Size:1235K _kec

KHB9D5N20D
KHB9D5N20D

KHB9D0N90P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB9D0N90P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES ·VDSS(Min.)= 900V, I

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .

 

 
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