KMB035N40DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KMB035N40DC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 12.2 nC
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 103 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: DPAK
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KMB035N40DC Datasheet (PDF)
kmb035n40dc.pdf

SEMICONDUCTOR KMB035N40DCTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERScharacteristics. It is mainly suitable for Back-light Inverter and powerLC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70
kmb035n40db.pdf

SEMICONDUCTOR KMB035N40DBTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheAcharacteristics. It is mainly suitable for Back-light Inverter and Power KDIM MILLIMETERSLC D_A 6.60 + 0.20Supply._B 6.10 + 0.20_C 5.34 + 0.30_D 0.70
kmb035n40da.pdf

SEMICONDUCTOR KMB035N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70
kmb030n30d.pdf

SEMICONDUCTOR KMB030N30DTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionSwitching regulator and DC-DC Converter applications.It s mainly suitable for power management in PC,portable equipment and battery powered systems.AHDIM MILLIMETERSJC D_6.6 0.2A +_B 6.1 + 0.2_C 5.33 + 0.1FEATURES _1.08 0.2D +_E 2.92 + 0.3BVDSS=30V, ID=30A._F 2.28 0.1
Otros transistores... KHB9D0N90N1 , KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P , KQ9N50P , KMB012N30QA , 7N60 , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P , KU045N10P , KU048N03D .



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