KML0D4N20TV MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KML0D4N20TV datasheet

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SEMICONDUCTOR KML0D4N20TV TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered E Systems and Level-Shifter. B 2 DIM MILLIMETERS FEATURES _ 1 A 1.2 +0.05 3 _ B 0.8 +0.05 VDSS=20V, ID=0.4A C 0.34 Max Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ F 0.8 + 0.05

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SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance RDS(ON)=0.70 @ VGS=4.5V RDS(ON)=0.85 @ VGS=2.5V RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHAR

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SEMICONDUCTOR KML0D4N20V TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. E B DIM MILLIMETERS 2 FEATURES _ A 1.2 +0.05 _ B 0.8 +0.05 VDSS=20V, ID=0.4A 1 3 _ C 0.5 + 0.05 Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ G 0.8 +

8.1. Size:783K kec
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SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS= -4.5V RDS(ON)=1.6 @ VGS= -2.5V RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. MAXIMUM RATING (Ta=25 ) CHA

Otros transistores... KHB9D5N20F2 , KHB9D5N20P , KQ9N50P , KMB012N30QA , KMB035N40DC , KMB054N40DC , KMB054N40IA , KMB6D0DN35QB , IRF2807 , KU024N06P , KU034N08P , KU045N10P , KU048N03D , KU054N03D , KU056N03Q , KU063N03Q , KU068N03D .