KML0D4N20TV
MOSFET. Datasheet pdf. Equivalent
Type Designator: KML0D4N20TV
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.17
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 0.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 3
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.41
Ohm
Package: TVSM
KML0D4N20TV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
KML0D4N20TV
Datasheet (PDF)
..1. Size:743K kec
kml0d4n20tv.pdf
SEMICONDUCTOR KML0D4N20TVTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Cell Phones, Battery PoweredESystems and Level-Shifter.B2DIM MILLIMETERSFEATURES _1 A 1.2 +0.053_B 0.8 +0.05VDSS=20V, ID=0.4AC 0.34 MaxDrain-Soure ON Resistance _D 0.3 + 0.05_E 1.2 + 0.05: RDS(ON)=0.70 @ VGS=4.5V_F 0.8 + 0.05
5.1. Size:771K kec
kml0d4n20e.pdf
SEMICONDUCTOR KML0D4N20ETECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIt s mainly suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS=20V, ID=0.4ADrain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V: RDS(ON)=0.85 @ VGS=2.5V: RDS(ON)=1.25 @ VGS=1.8VSuper High Dense Cell DesignMAXIMUM RATING (Ta=25)CHAR
5.2. Size:377K kec
kml0d4n20v.pdf
SEMICONDUCTOR KML0D4N20VTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionIts mainly suitable for Load Switching Cell Phones, Battery PoweredSystems and Level-Shifter.EBDIM MILLIMETERS2FEATURES _A 1.2 +0.05_B 0.8 +0.05VDSS=20V, ID=0.4A13_C 0.5 + 0.05Drain-Soure ON Resistance _D 0.3 + 0.05_E 1.2 + 0.05: RDS(ON)=0.70 @ VGS=4.5V_G 0.8 +
8.1. Size:783K kec
kml0d4p20e.pdf
SEMICONDUCTOR KML0D4P20ETECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIt s Mainly Suitable for Load Switching Mobile Phones, Battery PoweredSystems and Level-Shifter.FEATURES VDSS= -20V, ID= -0.35ADrain-Soure ON Resistance : RDS(ON)=1.2 @ VGS= -4.5V: RDS(ON)=1.6 @ VGS= -2.5V: RDS(ON)=2.7 @ VGS= -1.8VESD Protection diode.MAXIMUM RATING (Ta=25)CHA
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