KML0D4N20TV PDF and Equivalents Search

 

KML0D4N20TV Specs and Replacement

Type Designator: KML0D4N20TV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 0.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.41 Ohm

Package: TVSM

KML0D4N20TV substitution

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KML0D4N20TV datasheet

 ..1. Size:743K  kec
 kml0d4n20tv.pdf pdf_icon

KML0D4N20TV

SEMICONDUCTOR KML0D4N20TV TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered E Systems and Level-Shifter. B 2 DIM MILLIMETERS FEATURES _ 1 A 1.2 +0.05 3 _ B 0.8 +0.05 VDSS=20V, ID=0.4A C 0.34 Max Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ F 0.8 + 0.05... See More ⇒

 5.1. Size:771K  kec
 kml0d4n20e.pdf pdf_icon

KML0D4N20TV

SEMICONDUCTOR KML0D4N20E TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance RDS(ON)=0.70 @ VGS=4.5V RDS(ON)=0.85 @ VGS=2.5V RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design MAXIMUM RATING (Ta=25 ) CHAR... See More ⇒

 5.2. Size:377K  kec
 kml0d4n20v.pdf pdf_icon

KML0D4N20TV

SEMICONDUCTOR KML0D4N20V TECHNICAL DATA N-Ch Trench MOSFET General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. E B DIM MILLIMETERS 2 FEATURES _ A 1.2 +0.05 _ B 0.8 +0.05 VDSS=20V, ID=0.4A 1 3 _ C 0.5 + 0.05 Drain-Soure ON Resistance _ D 0.3 + 0.05 _ E 1.2 + 0.05 RDS(ON)=0.70 @ VGS=4.5V _ G 0.8 +... See More ⇒

 8.1. Size:783K  kec
 kml0d4p20e.pdf pdf_icon

KML0D4N20TV

SEMICONDUCTOR KML0D4P20E TECHNICAL DATA P-Ch Trench MOSFET General Description It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS= -20V, ID= -0.35A Drain-Soure ON Resistance RDS(ON)=1.2 @ VGS= -4.5V RDS(ON)=1.6 @ VGS= -2.5V RDS(ON)=2.7 @ VGS= -1.8V ESD Protection diode. MAXIMUM RATING (Ta=25 ) CHA... See More ⇒

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Detailed specifications: KHB9D5N20F2, KHB9D5N20P, KQ9N50P, KMB012N30QA, KMB035N40DC, KMB054N40DC, KMB054N40IA, KMB6D0DN35QB, IRF2807, KU024N06P, KU034N08P, KU045N10P, KU048N03D, KU054N03D, KU056N03Q, KU063N03Q, KU068N03D

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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