KHB1D2N80I Todos los transistores

 

KHB1D2N80I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KHB1D2N80I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 90 nS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 13 Ohm

Encapsulados: IPAK

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KHB1D2N80I datasheet

 5.1. Size:966K  kec
 khb1d2n80d i.pdf pdf_icon

KHB1D2N80I

KHB1D2N80D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D2N80D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 _ switching mode p

 9.1. Size:1023K  kec
 khb1d0n60i.pdf pdf_icon

KHB1D2N80I

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 600V, ID= 1.0A

 9.2. Size:957K  kec
 khb1d0n60d i.pdf pdf_icon

KHB1D2N80I

KHB1D0N60D/I SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KHB1D0N60D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent A K DIM MILLIMETERS avalanche characteristics. It is mainly suitable for electronic ballast and L C D _ A 6.60 + 0.20 switching mode powe

 9.3. Size:412K  kec
 khb1d0n70g.pdf pdf_icon

KHB1D2N80I

KHB1D0N70G SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast B C switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies and low power battery chargers. N DIM MILLIMETERS A 4.70 MAX E K B

MOSTRAR MÁS

Otros transistores... KHB011N40F2 , KHB011N40P1 , KHB019N20F1 , KHB019N20F2 , KHB019N20P1 , KHB1D0N60G , KHB1D0N60I , KHB1D2N80D , IRFP460 , KHB7D0N65F1 , KHB9D5N20F , KTK211 , KTK596 , KTK597 , KTK597E , KTK597TV , KTK597V .

 

 

 

 

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