KHB1D2N80I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KHB1D2N80I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 1.2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 90 nS
Conductancia de drenaje-sustrato (Cd): 25 pF
Resistencia entre drenaje y fuente RDS(on): 13 Ohm
Paquete / Cubierta: IPAK
Búsqueda de reemplazo de MOSFET KHB1D2N80I
KHB1D2N80I Datasheet (PDF)
khb1d2n80d i.pdf
KHB1D2N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D2N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20_switching mode p
khb1d0n60i.pdf
KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 600V, ID= 1.0A
khb1d0n60d i.pdf
KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode powe
khb1d0n70g.pdf
KHB1D0N70GSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastB Cswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.N DIM MILLIMETERSA 4.70 MAXEKB
khb1d0n60g.pdf
SEMICONDUCTORKHB1D0N60GN-Ch Planer MOSFETTECHNICAL DATAGeneral Description This planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.FEATURES VDSS= 600V, ID= 0.4ADrain-Source ON Resistance
khb1d9n60d i.pdf
KHB1D9N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D9N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for switching modeLC D_A 6.60 + 0.20_B 6.10 + 0.20power sup
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