KHB1D2N80I MOSFET Datasheet: N-Ch, 800V, 1.2A. Full specification with pinout and replacement list

KHB1D2N80I Specs and Replacement

Type Designator: KHB1D2N80I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 90 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm

Package: IPAK

KHB1D2N80I substitution

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KHB1D2N80I datasheet

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