All MOSFET. KHB1D2N80I Datasheet

 

KHB1D2N80I Datasheet and Replacement


   Type Designator: KHB1D2N80I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 13 Ohm
   Package: IPAK
 

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KHB1D2N80I Datasheet (PDF)

 5.1. Size:966K  kec
 khb1d2n80d i.pdf pdf_icon

KHB1D2N80I

KHB1D2N80D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D2N80DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20_switching mode p

 9.1. Size:1023K  kec
 khb1d0n60i.pdf pdf_icon

KHB1D2N80I

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for electronic ballast andswitching mode power supplies.FEATURES VDSS= 600V, ID= 1.0A

 9.2. Size:957K  kec
 khb1d0n60d i.pdf pdf_icon

KHB1D2N80I

KHB1D0N60D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KHB1D0N60DThis planar stripe MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSavalanche characteristics. It is mainly suitable for electronic ballast andLC D_A 6.60 + 0.20switching mode powe

 9.3. Size:412K  kec
 khb1d0n70g.pdf pdf_icon

KHB1D2N80I

KHB1D0N70GSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This planar stripe MOSFET has better characteristics, such as fastB Cswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for switch mode powersupplies and low power battery chargers.N DIM MILLIMETERSA 4.70 MAXEKB

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Datasheet: KHB011N40F2 , KHB011N40P1 , KHB019N20F1 , KHB019N20F2 , KHB019N20P1 , KHB1D0N60G , KHB1D0N60I , KHB1D2N80D , IRF640 , KHB7D0N65F1 , KHB9D5N20F , KTK211 , KTK596 , KTK597 , KTK597E , KTK597TV , KTK597V .

History: 3080K | PSMN3R0-60BS | TK4A80E | IRL7833PBF | STP3407 | NTB65N02R | BCS4N10

Keywords - KHB1D2N80I MOSFET datasheet

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