BSS123LT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS123LT1
Código: SA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.8 VCossⓘ - Capacitancia de salida: 9 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 6 Ohm
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de BSS123LT1 MOSFET
BSS123LT1 Datasheet (PDF)
bss123lt1.pdf

FM120-M WILLASTHRUBSS123LT1FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VN-CHANNEL POWER MOSFETSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board s
bss123lt1rev2x.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BSS123LT1/DTMOS FET TransistorBSS123LT1NChannel3 DRAINMotorola Preferred Device1GATE32 SOURCE1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDSS 100 VdcCASE 31808, STYLE 21SOT23 (TO236AB)GateSource Voltage Continuous VGS 20 Vdc Nonrepetitive (tp
bss123lt1-d.pdf

BSS123LT1Preferred DevicePower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures Pb-Free Packages are Available170 mAMPS100 VOLTSRDS(on) = 6 WN-Channel3MAXIMUM RATINGSRating Symbol Value UnitDrain-Source Voltage VDSS 100 VdcGate-Source Voltage 1- Continuous VGS 20 Vdc- Non-repetitive (tp 50 ms) VGSM 40 VpkDrain Current Adc2-
bss123lt1g bvss123lt1g.pdf

BSS123LT1G,BVSS123LT1GPower MOSFET170 mAmps, 100 VoltsN-Channel SOT-23http://onsemi.comFeatures 170 mAMPS BVSS Prefix for Automotive and Other Applications Requiring100 VOLTSUnique Site and Control Change Requirements; AEC-Q101RDS(on) = 6 WQualified and PPAP CapableN-Channel These Devices are Pb-Free and are RoHS Compliant3MAXIMUM RATINGSRating Symbol Value
Otros transistores... 2N7002ELT1 , 2N7002LT1 , 2N7002NT1 , 2N7002WT1 , 2SK3018LT1 , 2SK3018WT1 , 2SK3019TT1 , 2SK3541M3T5 , K4145 , BSS138LT1 , BSS138WT1 , BSS84LT1 , BSS84WT1 , SE2301 , SE2302 , SE2303 , SE2304 .
History: 5N65AF
History: 5N65AF



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