BSS84LT1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSS84LT1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 50 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1 nS
Cossⓘ - Capacitancia de salida: 10 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 10 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de BSS84LT1 MOSFET
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BSS84LT1 datasheet
bss84lt1.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transistors ENHANCEMENT MODE TMOS MOSFET 3 DRAIN 3 1 2 1 CASE 318 08, Style 21 GATE SOT 23 (TO 236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating
bss84lt1.pdf
FM120-M WILLAS BSS84LT1 THRU mAmps, 50 Vo ts Power MOSFET 130 BARRIER RECTIFIERS -20V- 200V FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi
bss84lt1rev0x.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transistors ENHANCEMENT MODE TMOS MOSFET 3 DRAIN 3 1 2 1 CASE 318 08, Style 21 GATE SOT 23 (TO 236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating
bvss84l sbss84lt1g.pdf
BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W SOT-23 Surface Mount Package Saves Board Space http //onsemi.com AEC Q101 Qualified and PPAP Capable - BVSS84L These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) -50 V 10 W @ 10 V Rating Symbol Value Unit P-Channel Drain-to-Source Voltag
Otros transistores... 2N7002WT1 , 2SK3018LT1 , 2SK3018WT1 , 2SK3019TT1 , 2SK3541M3T5 , BSS123LT1 , BSS138LT1 , BSS138WT1 , IRLB4132 , BSS84WT1 , SE2301 , SE2302 , SE2303 , SE2304 , SE2305 , SE2306 , SE2312 .
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