H07N60E MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: H07N60E

8.1. Size:79K hsmc
h07n60.pdf pdf_icon

Spec. No. MOS200604 HI-SINCERITY Issued Date 2006.02.01 Revised Date 2006.02.07 MICROELECTRONICS CORP. Page No. 1/5 H07N60 Series Pin Assignment H07N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This high voltage MOSFET uses an advanced termination schem

9.1. Size:161K hsmc
h07n65.pdf pdf_icon

Spec. No. MOS200801 HI-SINCERITY Issued Date 2008.07.22 Revised Date 2009.0514 MICROELECTRONICS CORP. Page No. 1/6 H07N65 Series Pin Assignment H07N65 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This high voltage MOSFET uses an advanced termination scheme

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wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdf pdf_icon

WML0 MM07N65C 07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C 07N65C2, WMP07N65C2, WM C2 650 Junction ET 0V 1.0 Super J n Power MOSFE Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

Otros transistores... H04N65E , H04N65F , H05N50E , H05N50F , H05N60E , H05N60F , H06N60E , H06N60F , 7N60 , H07N60F , H07N65E , H07N65F , H10N60E , H10N60F , H10N65E , H10N65F , H12N60E .