All MOSFET. H07N60E Datasheet

 

H07N60E MOSFET. Datasheet pdf. Equivalent

Type Designator: H07N60E

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 19 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO220AB

H07N60E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H07N60E Datasheet (PDF)

4.1. h07n60.pdf Size:79K _hsmc

H07N60E
H07N60E

Spec. No. : MOS200604 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H07N60 Series Pin Assignment H07N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This high voltage MOSFET uses an advanced termination scheme t

5.1. h07n65.pdf Size:161K _hsmc

H07N60E
H07N60E

Spec. No. : MOS200801 HI-SINCERITY Issued Date : 2008.07.22 Revised Date : 2009.0514 MICROELECTRONICS CORP. Page No. : 1/6 H07N65 Series Pin Assignment H07N65 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This high voltage MOSFET uses an advanced termination scheme to

Datasheet: H04N65E , H04N65F , H05N50E , H05N50F , H05N60E , H05N60F , H06N60E , H06N60F , BUK455-200A , H07N60F , H07N65E , H07N65F , H10N60E , H10N60F , H10N65E , H10N65F , H12N60E .

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