H07N60E Datasheet and Replacement

Spec. No. : MOS200604 HI-SINCERITY Issued Date : 2006.02.01 Revised Date : 2006.02.07 MICROELECTRONICS CORP. Page No. : 1/5 H07N60 Series Pin Assignment H07N60 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220ABPackage Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: SourceThis high voltage MOSFET uses an advanced termination schem

Spec. No. : MOS200801 HI-SINCERITY Issued Date : 2008.07.22 Revised Date : 2009.0514 MICROELECTRONICS CORP. Page No. : 1/6 H07N65 Series Pin Assignment H07N65 Series Tab N-Channel Power Field Effect Transistor 3-Lead Plastic TO-220ABPackage Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: SourceThis high voltage MOSFET uses an advanced termination scheme

WML0 MM07N65C07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C07N65C2, WMP07N65C2, WM C2 650 Junction ET0V 1.0 Super J n Power MOSFEDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-reand low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25