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H3055MJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: H3055MJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 73 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm

Encapsulados: TO252

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H3055MJ datasheet

 ..1. Size:44K  hsmc
h3055mj.pdf pdf_icon

H3055MJ

Spec. No. MOS200702 HI-SINCERITY Issued Date 2007.03.01 Revised Date 2007.03.28 MICROELECTRONICS CORP. Page No. 1/4 H3055MJ Pin Assignment H3055MJ Tab 3-Lead Plastic TO-252 Package Code J N-Channel Enhancement-Mode MOSFET (30V, 12A) Pin 1 Gate 3 Pin 2 & Tab Drain 2 1 Pin 3 Source D Description Internal Schematic Diagram This N-Channel 2.5V spe

 9.1. Size:50K  fairchild semi
ksh3055.pdf pdf_icon

H3055MJ

KSH3055 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, -I Suffix) D-PAK I-PAK 11 Electrically Similar to Popular KSE3055T 1.Base 2.Collector 3.Emitter DC Current Gain Specified to 10A High Current Gain - Bandwidth Product fT = 2

 9.2. Size:24K  samsung
ksh3055.pdf pdf_icon

H3055MJ

KSH3055 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER D-PAK LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) 1 Straight Lead (I. PACK, -I Suffix) Electrically Similar to Popular KSE3055 DC Current Gain Specified to 10A High Current Gain - Bandwidth Product 1. Base 2

 9.3. Size:42K  hsmc
h3055lj.pdf pdf_icon

H3055MJ

Spec. No. MOS200606 HI-SINCERITY Issued Date 2006.03.01 Revised Date 2006.05.04 MICROELECTRONICS CORP. Page No. 1/4 H3055LJ Pin Assignment H3055LJ Tab 3-Lead Plastic TO-252 Package Code J N-Channel Enhancement-Mode MOSFET (20V, 13A) Pin 1 Gate 3 Pin 2 & Tab Drain 2 1 Pin 3 Source D Description Internal Schematic Diagram This N-Channel 2.5V specified MOSFET is a

Otros transistores... H2302N , H2305N , H2N7000 , H2N7002 , H2N7002K , H2N7002KSN , H2N7002SN , H3055LJ , IRF840 , H35N03J , H4422S , H4435S , H4946DS , H4946S , H50N03J , H6968CTS , H6968S .

History: AGM4012A

 

 

 


History: AGM4012A

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