BUZ354 Todos los transistores

 

BUZ354 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUZ354

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 120 nS

Conductancia de drenaje-sustrato (Cd): 400 pF

Resistencia drenaje-fuente RDS(on): 0.8 Ohm

Empaquetado / Estuche: TO218

Búsqueda de reemplazo de MOSFET BUZ354

 

BUZ354 Datasheet (PDF)

1.1. buz354.pdf Size:280K _st2

BUZ354
BUZ354

5.1. buz357 buz358.pdf Size:474K _update_mosfet

BUZ354
BUZ354

SIPMOS® Power Transistors BUZ 357 BUZ 358 N channel Enhancement mode Avalanche-rated 1) Type VDS ID RDS (on) Package Ordering Code BUZ 357 1000 V 5.1 A 2.0 Ω TO-218 AA C67078-S3110-A2 BUZ 358 1000 V 4.5 A 2.6 Ω TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol BUZ Unit 357 358 Continuous drain current, TC = 25 ˚C ID 5.1 4.5 A Pulsed drain current, TC = 25 ˚C ID p

5.2. buz350.pdf Size:106K _update_mosfet

BUZ354
BUZ354

BUZ 350 ® SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 350 200 V 22 A 0.12 Ω TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 ˚C 22 Pulsed drain current IDpuls TC = 25 ˚C 88 Avalanche current,limited by Tjmax I

 5.3. buz351.pdf Size:182K _update_mosfet

BUZ354
BUZ354



5.4. buz355 buz356.pdf Size:489K _update_mosfet

BUZ354
BUZ354

SIPMOS® Power Transistors BUZ 355 BUZ 356 N channel Enhancement mode 1) Type VDS ID TC RDS (on) Package Ordering Code BUZ 355 800 V 6.0 A 29 ˚C 1.5 Ω TO-218 AA C67078-A3107-A2 BUZ 356 800 V 5.3 A 25 ˚C 2.0 Ω TO-218 AA C67078-A3108-A2 Maximum Ratings Parameter Symbol BUZ Unit 355 356 Continuous drain current ID 6.0 5.3 A Pulsed drain current, TC = 25 ˚C ID puls 21 Drain so

 5.5. buz353.pdf Size:264K _st2

BUZ354
BUZ354

5.6. buz357.pdf Size:280K _siemens

BUZ354
BUZ354

5.7. buz356.pdf Size:207K _siemens

BUZ354
BUZ354

BUZ 356 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 356 800 V 5.3 A 2 ? TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 5.3 Pulsed drain current IDpuls TC = 25 C 21 Avalanche current,limited by Tjmax IAR 5.1 Avalanche

5.8. buz358.pdf Size:68K _siemens

BUZ354
BUZ354

BUZ 358 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 358 1000 V 4.5 A 2.6 ? TO-218 AA C67078-S3111-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 25 C 4.5 Pulsed drain current IDpuls TC = 25 C 18 Avalanche current,limited by Tjmax IAR 5.1 Avalan

5.9. buz355.pdf Size:208K _siemens

BUZ354
BUZ354

BUZ 355 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 355 800 V 6 A 1.5 ? TO-218 AA C67078-S3107-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 29 C 6 Pulsed drain current IDpuls TC = 25 C 24 Avalanche current,limited by Tjmax IAR 5.1 Avalanche e

5.10. buz350.pdf Size:98K _infineon

BUZ354
BUZ354

BUZ 350 SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 350 200 V 22 A 0.12 ? TO-218 AA C67078-S3117-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current ID A TC = 33 ?C 22 Pulsed drain current IDpuls TC = 25 ?C 88 Avalanche current,limited by Tjmax IAR 22 Avalanc

5.11. buz35.pdf Size:223K _inchange_semiconductor

BUZ354
BUZ354

isc N-Channel Mosfet Transistor BUZ35 ·FEATURES ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·SOA is Power Dissipation Limited ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for

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