FDS6670A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS6670A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET FDS6670A

FDS6670A Datasheet (PDF)

..1. Size:137K fairchild semi
fds6670a.pdf

June 2003FDS6670ASingle N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced 13 A, 30 V. RDS(ON) = 8 m @ VGS = 10 Vusing Fairchild Semiconductors advanced RDS(ON) = 10 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc

..2. Size:250K onsemi
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

0.1. Size:295K fairchild semi
fds6670as.pdf

July 2010FDS6670AS30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDS6670AS is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 11.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

0.2. Size:321K onsemi
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0.3. Size:1435K cn vbsemi
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FDS6670ASwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

Otros transistores... FDS5690 , FDS6375 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , IRF1010E , FDS6675 , FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 .

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