FDS6670A
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS6670A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 13
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
SO8
FDS6670A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS6670A
Datasheet (PDF)
..1. Size:137K fairchild semi
fds6670a.pdf
June 2003FDS6670ASingle N-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced 13 A, 30 V. RDS(ON) = 8 m @ VGS = 10 Vusing Fairchild Semiconductors advanced RDS(ON) = 10 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switc
..2. Size:250K onsemi
fds6670a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.1. Size:295K fairchild semi
fds6670as.pdf
July 2010FDS6670AS30V N-Channel PowerTrench SyncFETGeneral Description FeaturesThe FDS6670AS is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) max= 9.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 11.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu
0.2. Size:321K onsemi
fds6670as.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
0.3. Size:1435K cn vbsemi
fds6670as.pdf
FDS6670ASwww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS
Datasheet: FDS5690
, FDS6375
, FDS6570A
, FDS6575
, FDS6576
, FDS6612A
, FDS6614A
, FDS6630A
, AON7410
, FDS6675
, FDS6680
, FDS6680A
, FDS6685
, FDS6690A
, FDS6875
, FDS6890A
, FDS6912
.