IRF621FI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF621FI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: ISOWATT220
Búsqueda de reemplazo de MOSFET IRF621FI
IRF621FI Datasheet (PDF)
irf6216pbf.pdf
SMPS MOSFETPD - 95293IRF6216PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp ResetDC-DC converters -150V 0.240W@VGS =-10V -2.2Al Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001)4
irf6218spbf.pdf
PD - 96181IRF6218SPbFSMPS MOSFETIRF6218LPbFHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)D2Pak TO-262l Fully Cha
irf6215s.pdf
PD - 91643IRF6215S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF6215S)VDSS = -150V Low-profile through-hole (IRF6215L) 175C Operating TemperatureRDS(on) = 0.29 Fast SwitchingG P-ChannelID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve
irf6218l.pdf
PD - 95863AIRF6218SSMPS MOSFETIRF6218LHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)TO-262D2Pakl Fully Charact
auirf6215s.pdf
AUTOMOTIVE GRADEAUIRF6215SFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DVDSS -150Vl P-Channell Dynamic dV/dT RatingG RDS(on) max. 0.29l 175C Operating TemperatureSID -13Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified *DescriptionSSpec
irf6215pbf.pdf
PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
irf6216.pdf
PD - 94297IRF6216SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Reset Switch for Active Clamp Reset-150V 0.240@VGS =-10V -2.2ADC-DC convertersBenefits Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001
irf6215.pdf
PD - 91479BIRF6215HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.29 P-ChannelG Fully Avalanche RatedID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area
auirf6218l auirf6218s.pdf
AUTOMOTIVE GRADEAUIRF6218SAUIRF6218LFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS -150Vl P-Channell Dynamic dV/dT RatingRDS(on) max 150ml 175C Operating TemperatureGl Fast SwitchingS ID -27Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *D
irf6216pbf-1.pdf
IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme
irf6217.pdf
PD - 94359IRF6217SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Reset Switch for Active Clamp Reset-150V 2.4@VGS =-10V -0.7ADC to DC convertersBenefits Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN100
irf6217pbf-1.pdf
IRF6217PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 2.4 2 7S D(@V = -10V)GSQg (typical) 6 nC 3 6S DID 4 5-0.7 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6217pbf.pdf
PD - 95252IRF6217PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp Reset-150V 2.4W@VGS =-10V -0.7ADC to DC convertersl Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN1001)
irf6215lpbf irf6215spbf.pdf
PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S
irf6218spbf.pdf
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m@ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
auirf6215.pdf
PD - 97564AUTOMOTIVE GRADEAUIRF6215Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel P-Channel DV(BR)DSS-150Vl Dynamic dv/dt RatingRDS(on) max.0.29l 175C Operating TemperatureGl Fast SwitchingID-13ASl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive QualifiedDD
auirf6215s.pdf
AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo
irf6215pbf.pdf
PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe
irf6215spbf irf6215lpbf.pdf
PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S
irf6216pbf-1.pdf
IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme
irf6218pbf.pdf
PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac
irf6217pbf.pdf
PD - 95252IRF6217PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp Reset-150V 2.4W@VGS =-10V -0.7ADC to DC convertersl Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN1001)
irf6218.pdf
isc P-Channel MOSFET Transistor IRF6218,IIRF6218FEATURESStatic drain-source on-resistance:RDS(on)0.15Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONReset switch for active clampReset DC-DC convertersLow gate to drain charge to reduce switching lossesABSOLUTE MAXIMUM
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918