IRF621FI MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF621FI
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 60 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Encapsulados: ISOWATT220
Búsqueda de reemplazo de IRF621FI MOSFET
- Selecciónⓘ de transistores por parámetros
IRF621FI datasheet
8.1. Size:124K international rectifier
irf6216pbf.pdf 
SMPS MOSFET PD - 95293 IRF6216PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset DC-DC converters -150V 0.240W@VGS =-10V -2.2A l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001) 4
8.2. Size:299K international rectifier
irf6218spbf.pdf
PD - 96181 IRF6218SPbF SMPS MOSFET IRF6218LPbF HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) D2Pak TO-262 l Fully Cha
8.3. Size:182K international rectifier
irf6215s.pdf
PD - 91643 IRF6215S/L HEXFET Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175 C Operating Temperature RDS(on) = 0.29 Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
8.4. Size:270K international rectifier
auirf6215.pdf
PD - 97564 AUTOMOTIVE GRADE AUIRF6215 Features l Advanced Planar Technology HEXFET Power MOSFET l Low On-Resistance l P-Channel D V(BR)DSS -150V l Dynamic dv/dt Rating RDS(on) max. 0.29 l 175 C Operating Temperature G l Fast Switching ID -13A S l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified D D
8.5. Size:275K international rectifier
irf6218l.pdf
PD - 95863A IRF6218S SMPS MOSFET IRF6218L HEXFET Power MOSFET Applications l Reset Switch for Active Clamp VDSS RDS(on) max ID Reset DC-DC converters 150m @VGS = -10V -27A -150V Benefits D l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design (See G App. Note AN1001) TO-262 D2Pak l Fully Charact
8.6. Size:820K international rectifier
auirf6215s.pdf
AUTOMOTIVE GRADE AUIRF6215S Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D VDSS -150V l P-Channel l Dynamic dV/dT Rating G RDS(on) max. 0.29 l 175 C Operating Temperature S ID -13A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * Description S Spec
8.7. Size:177K international rectifier
irf6215pbf.pdf
PD - 94817 IRF6215PbF HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating D 175 C Operating Temperature VDSS = -150V Fast Switching P-Channel RDS(on) = 0.29 Fully Avalanche Rated G Lead-Free ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance pe
8.8. Size:103K international rectifier
irf6216.pdf
PD - 94297 IRF6216 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset -150V 0.240 @VGS =-10V -2.2A DC-DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001
8.9. Size:992K international rectifier
irf6215spbf irf6215lpbf.pdf
PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S
8.10. Size:125K international rectifier
irf6215.pdf
PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -150V 175 C Operating Temperature Fast Switching RDS(on) = 0.29 P-Channel G Fully Avalanche Rated ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area
8.11. Size:229K international rectifier
auirf6218l auirf6218s.pdf
AUTOMOTIVE GRADE AUIRF6218S AUIRF6218L Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS -150V l P-Channel l Dynamic dV/dT Rating RDS(on) max 150m l 175 C Operating Temperature G l Fast Switching S ID -27A l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant D l Automotive Qualified * D
8.12. Size:193K international rectifier
irf6216pbf-1.pdf
IRF6216PbF-1 HEXFET Power MOSFET VDS -150 V A 1 8 S D RDS(on) max 0.24 2 7 S D (@V = -10V) GS Qg (typical) 33 nC 3 6 S D ID 4 5 -2.2 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environme
8.13. Size:105K international rectifier
irf6217.pdf
PD - 94359 IRF6217 SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset -150V 2.4 @VGS =-10V -0.7A DC to DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN100
8.14. Size:194K international rectifier
irf6217pbf-1.pdf
IRF6217PbF-1 HEXFET Power MOSFET VDS -150 V A 1 8 S D RDS(on) max 2.4 2 7 S D (@V = -10V) GS Qg (typical) 6 nC 3 6 S D ID 4 5 -0.7 A G D (@T = 25 C) A SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environment
8.15. Size:136K international rectifier
irf6218pbf.pdf
PD -95441 IRF6218PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp 150m @VGS = -10V -27A -150V Reset DC-DC converters l Lead-Free D Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including G Effective COSS to Simplify Design (See App. Note AN1001) TO-220AB S l Fully Charac
8.16. Size:125K international rectifier
irf6217pbf.pdf
PD - 95252 IRF6217PbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Reset Switch for Active Clamp Reset -150V 2.4W@VGS =-10V -0.7A DC to DC converters l Lead-Free Benefits l Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN1001)
8.17. Size:992K international rectifier
irf6215lpbf irf6215spbf.pdf
PD - 95132 IRF6215S/LPbF Lead-Free www.irf.com 1 4/21/05 IRF6215S/LPbF 2 www.irf.com IRF6215S/LPbF www.irf.com 3 IRF6215S/LPbF 4 www.irf.com IRF6215S/LPbF www.irf.com 5 IRF6215S/LPbF 6 www.irf.com IRF6215S/LPbF www.irf.com 7 IRF6215S/LPbF D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WIT H PART NUMBER LOT CODE 8024 INTERNAT IONAL AS S
8.19. Size:454K infineon
irf6218spbf.pdf
SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m @ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized
8.20. Size:2157K infineon
auirf6215s.pdf
AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175 C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo
8.21. Size:240K inchange semiconductor
irf6218.pdf
isc P-Channel MOSFET Transistor IRF6218,IIRF6218 FEATURES Static drain-source on-resistance RDS(on) 0.15 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Reset switch for active clamp Reset DC-DC converters Low gate to drain charge to reduce switching losses ABSOLUTE MAXIMUM
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