Справочник MOSFET. IRF621FI

 

IRF621FI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IRF621FI
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 300 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: ISOWATT220

 Аналог (замена) для IRF621FI

 

 

IRF621FI Datasheet (PDF)

 8.1. Size:124K  international rectifier
irf6216pbf.pdf

IRF621FI
IRF621FI

SMPS MOSFETPD - 95293IRF6216PbFHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp ResetDC-DC converters -150V 0.240W@VGS =-10V -2.2Al Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001)4

 8.2. Size:299K  international rectifier
irf6218spbf.pdf

IRF621FI
IRF621FI

PD - 96181IRF6218SPbFSMPS MOSFETIRF6218LPbFHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)D2Pak TO-262l Fully Cha

 8.3. Size:182K  international rectifier
irf6215s.pdf

IRF621FI
IRF621FI

PD - 91643IRF6215S/LHEXFET Power MOSFET Advanced Process TechnologyD Surface Mount (IRF6215S)VDSS = -150V Low-profile through-hole (IRF6215L) 175C Operating TemperatureRDS(on) = 0.29 Fast SwitchingG P-ChannelID = -13A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

 8.4. Size:275K  international rectifier
irf6218l.pdf

IRF621FI
IRF621FI

PD - 95863AIRF6218SSMPS MOSFETIRF6218LHEXFET Power MOSFETApplicationsl Reset Switch for Active ClampVDSS RDS(on) max IDReset DC-DC converters150m @VGS = -10V -27A-150VBenefitsDl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design (SeeGApp. Note AN1001)TO-262D2Pakl Fully Charact

 8.5. Size:820K  international rectifier
auirf6215s.pdf

IRF621FI
IRF621FI

AUTOMOTIVE GRADEAUIRF6215SFeatures HEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DVDSS -150Vl P-Channell Dynamic dV/dT RatingG RDS(on) max. 0.29l 175C Operating TemperatureSID -13Al Fast Switchingl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliant Dl Automotive Qualified *DescriptionSSpec

 8.6. Size:177K  international rectifier
irf6215pbf.pdf

IRF621FI
IRF621FI

PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 8.7. Size:103K  international rectifier
irf6216.pdf

IRF621FI
IRF621FI

PD - 94297IRF6216SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Reset Switch for Active Clamp Reset-150V 0.240@VGS =-10V -2.2ADC-DC convertersBenefits Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3Effective COSS to Simplify Design (See 6S DApp. Note AN1001

 8.8. Size:125K  international rectifier
irf6215.pdf

IRF621FI
IRF621FI

PD - 91479BIRF6215HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = -150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.29 P-ChannelG Fully Avalanche RatedID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area

 8.9. Size:229K  international rectifier
auirf6218l auirf6218s.pdf

IRF621FI
IRF621FI

AUTOMOTIVE GRADEAUIRF6218SAUIRF6218LFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS -150Vl P-Channell Dynamic dV/dT RatingRDS(on) max 150ml 175C Operating TemperatureGl Fast SwitchingS ID -27Al Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified *D

 8.10. Size:193K  international rectifier
irf6216pbf-1.pdf

IRF621FI
IRF621FI

IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme

 8.11. Size:105K  international rectifier
irf6217.pdf

IRF621FI
IRF621FI

PD - 94359IRF6217SMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Reset Switch for Active Clamp Reset-150V 2.4@VGS =-10V -0.7ADC to DC convertersBenefits Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S D Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN100

 8.12. Size:194K  international rectifier
irf6217pbf-1.pdf

IRF621FI
IRF621FI

IRF6217PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 2.4 2 7S D(@V = -10V)GSQg (typical) 6 nC 3 6S DID 4 5-0.7 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environment

 8.13. Size:136K  international rectifier
irf6218pbf.pdf

IRF621FI
IRF621FI

PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac

 8.14. Size:125K  international rectifier
irf6217pbf.pdf

IRF621FI
IRF621FI

PD - 95252IRF6217PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp Reset-150V 2.4W@VGS =-10V -0.7ADC to DC convertersl Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN1001)

 8.15. Size:992K  international rectifier
irf6215lpbf irf6215spbf.pdf

IRF621FI
IRF621FI

PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S

 8.16. Size:508K  st
irf620 irf621 irf622 irf623-fi.pdf

IRF621FI
IRF621FI

 8.17. Size:454K  infineon
irf6218spbf.pdf

IRF621FI
IRF621FI

SMPS MOSFET IRF6218SPbF HEXFET Power MOSFET Applications VDSS RDS(on) (max) ID Reset Switch for Active Clamp Reset DC-DC converters - 150V 150m@ VGS = -10V -27A Benefits D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design (See App. Note AN1001) S Fully Characterized

 8.18. Size:270K  infineon
auirf6215.pdf

IRF621FI
IRF621FI

PD - 97564AUTOMOTIVE GRADEAUIRF6215Featuresl Advanced Planar TechnologyHEXFET Power MOSFETl Low On-Resistancel P-Channel DV(BR)DSS-150Vl Dynamic dv/dt RatingRDS(on) max.0.29l 175C Operating TemperatureGl Fast SwitchingID-13ASl Fully Avalanche Ratedl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS Compliantl Automotive QualifiedDD

 8.19. Size:2157K  infineon
auirf6215s.pdf

IRF621FI
IRF621FI

AUTOMOTIVE GRADE AUIRF6215S HEXFET Power MOSFET Features Advanced Planar Technology VDSS -150V Low On-Resistance P-Channel MOSFET RDS(on) max. 0.29 Dynamic dv/dt Rating 175C Operating Temperature ID -13A Fast Switching Fully Avalanche Rated D Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automo

 8.20. Size:177K  infineon
irf6215pbf.pdf

IRF621FI
IRF621FI

PD - 94817IRF6215PbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = -150V Fast Switching P-ChannelRDS(on) = 0.29 Fully Avalanche RatedG Lead-FreeID = -13ADescription SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance pe

 8.21. Size:992K  infineon
irf6215spbf irf6215lpbf.pdf

IRF621FI
IRF621FI

PD - 95132IRF6215S/LPbF Lead-Freewww.irf.com 14/21/05IRF6215S/LPbF2 www.irf.comIRF6215S/LPbFwww.irf.com 3IRF6215S/LPbF4 www.irf.comIRF6215S/LPbFwww.irf.com 5IRF6215S/LPbF6 www.irf.comIRF6215S/LPbFwww.irf.com 7IRF6215S/LPbFD2Pak Package OutlineD2Pak Part Marking InformationTHIS IS AN IRF530S WIT HPART NUMBERLOT CODE 8024INTERNAT IONALAS S

 8.22. Size:193K  infineon
irf6216pbf-1.pdf

IRF621FI
IRF621FI

IRF6216PbF-1HEXFET Power MOSFETVDS -150 VA1 8S DRDS(on) max 0.24 2 7S D(@V = -10V)GSQg (typical) 33 nC 3 6S DID 4 5-2.2 AG D(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environme

 8.23. Size:136K  infineon
irf6218pbf.pdf

IRF621FI
IRF621FI

PD -95441IRF6218PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp150m @VGS = -10V -27A-150VReset DC-DC convertersl Lead-FreeDBenefitsl Low Gate to Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingGEffective COSS to Simplify Design (SeeApp. Note AN1001)TO-220ABSl Fully Charac

 8.24. Size:125K  infineon
irf6217pbf.pdf

IRF621FI
IRF621FI

PD - 95252IRF6217PbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Reset Switch for Active Clamp Reset-150V 2.4W@VGS =-10V -0.7ADC to DC convertersl Lead-FreeBenefitsl Low Gate to Drain Charge to Reduce A1 8S DSwitching Losses2 7S Dl Fully Characterized Capacitance Including3 6Effective COSS to Simplify Design (SeeS DApp. Note AN1001)

 8.25. Size:240K  inchange semiconductor
irf6218.pdf

IRF621FI
IRF621FI

isc P-Channel MOSFET Transistor IRF6218,IIRF6218FEATURESStatic drain-source on-resistance:RDS(on)0.15Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONReset switch for active clampReset DC-DC convertersLow gate to drain charge to reduce switching lossesABSOLUTE MAXIMUM

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top