FDS6675 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS6675

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SO8

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FDS6675 datasheet

 ..1. Size:199K  fairchild semi
 fds6675.pdf pdf_icon

FDS6675

October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, using Fairchild Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V. process that has been especially tailored to minimize the Low gate charge (30nC typical). on-state

 ..2. Size:282K  onsemi
 fds6675.pdf pdf_icon

FDS6675

FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V, using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V. process that has been especially tailored to minimize the Low gate charge (30nC typical). on-state resistance and yet

 0.1. Size:505K  fairchild semi
 fds6675bz.pdf pdf_icon

FDS6675

March 2009 FDS6675BZ tm P-Channel PowerTrench MOSFET -30V, -11A, 13m General Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11A This P-Channel MOSFET is producted using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9A been especially tailored to minimize the on-state resistance. Extended VGS

 0.2. Size:105K  fairchild semi
 fds6675a.pdf pdf_icon

FDS6675

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

MOSTRAR MÁS

Otros transistores... FDS6375, FDS6570A, FDS6575, FDS6576, FDS6612A, FDS6614A, FDS6630A, FDS6670A, IRLB4132, FDS6680, FDS6680A, FDS6685, FDS6690A, FDS6875, FDS6890A, FDS6912, FDS6912A