FDS6675 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS6675
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET FDS6675

FDS6675 Datasheet (PDF)

..1. Size:199K fairchild semi
fds6675.pdf

October 1998FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced-11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize theLow gate charge (30nC typical).on-state

..2. Size:282K onsemi
fds6675.pdf

FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize the Low gate charge (30nC typical).on-state resistance and yet

0.1. Size:505K fairchild semi
fds6675bz.pdf

March 2009FDS6675BZtmP-Channel PowerTrench MOSFET -30V, -11A, 13mGeneral Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9Abeen especially tailored to minimize the on-stateresistance. Extended VGS

0.2. Size:105K fairchild semi
fds6675a.pdf

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

0.3. Size:447K onsemi
fds6675bz.pdf

FDS6675BZP-Channel PowerTrench MOSFET-30V, -11A, 13mFeaturesGeneral Description Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using ON Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9ASemiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state Extended VGS range (-25V) for battery application

0.4. Size:814K cn vbsemi
fds6675b.pdf

FDS6675Bwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.0180 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

Otros transistores... FDS6375 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , SPP20N60C3 , FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , FDS6912A .

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