All MOSFET. FDS6675 Datasheet

 

FDS6675 Datasheet and Replacement


   Type Designator: FDS6675
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SO8
 

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FDS6675 Datasheet (PDF)

 ..1. Size:199K  fairchild semi
fds6675.pdf pdf_icon

FDS6675

October 1998FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced-11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using Fairchild Semiconductor's advanced PowerTrenchRDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize theLow gate charge (30nC typical).on-state

 ..2. Size:282K  onsemi
fds6675.pdf pdf_icon

FDS6675

FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced -11 A, -30 V. RDS(ON) = 0.014 @ VGS = -10 V,using ON Semiconductor's advanced PowerTrench RDS(ON) = 0.020 @ VGS = -4.5 V.process that has been especially tailored to minimize the Low gate charge (30nC typical).on-state resistance and yet

 0.1. Size:505K  fairchild semi
fds6675bz.pdf pdf_icon

FDS6675

March 2009FDS6675BZtmP-Channel PowerTrench MOSFET -30V, -11A, 13mGeneral Description Features Max rDS(on) = 13m at VGS = -10V, ID = -11AThis P-Channel MOSFET is producted using Fairchild Semiconductors advanced PowerTrench process that has Max rDS(on) = 21.8m at VGS = -4.5V, ID = -9Abeen especially tailored to minimize the on-stateresistance. Extended VGS

 0.2. Size:105K  fairchild semi
fds6675a.pdf pdf_icon

FDS6675

February 2003 FDS6675A 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of 11 A, 30 V RDS(ON) = 13 m @ VGS = 10 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 19 m @ VGS = 4.5 V process. It has been optimized for power management applications requiring a wide rang

Datasheet: FDS6375 , FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , 5N60 , FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , FDS6912A .

History: BUK436W-800B

Keywords - FDS6675 MOSFET datasheet

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