FDS6680 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS6680
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: SO8

Búsqueda de reemplazo de MOSFET FDS6680

FDS6680 Datasheet (PDF)

..1. Size:107K fairchild semi
fds6680.pdf

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

0.1. Size:102K fairchild semi
fds6680a.pdf

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductors advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint

0.2. Size:84K fairchild semi
fds6680s.pdf

0.3. Size:982K fairchild semi
fds6680as.pdf

May 2008 tmFDS6680AS 30V N-Channel PowerTrench SyncFETGeneral Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

0.4. Size:229K onsemi
fds6680a.pdf

FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET Features General Description 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced using ON Semiconductors advanced PowerRDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maintain Ultra-low gate

0.5. Size:852K onsemi
fds6680as.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , FDS6675 , AO4407 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , FDS6912A , FDS6930A .

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