FDS6680 Todos los transistores

 

FDS6680 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS6680
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: SO8
     - Selección de transistores por parámetros

 

FDS6680 Datasheet (PDF)

 ..1. Size:107K  fairchild semi
fds6680.pdf pdf_icon

FDS6680

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

 0.1. Size:102K  fairchild semi
fds6680a.pdf pdf_icon

FDS6680

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductors advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint

 0.2. Size:84K  fairchild semi
fds6680s.pdf pdf_icon

FDS6680

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

 0.3. Size:982K  fairchild semi
fds6680as.pdf pdf_icon

FDS6680

May 2008 tmFDS6680AS 30V N-Channel PowerTrench SyncFETGeneral Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Otros transistores... FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , FDS6675 , TK10A60D , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , FDS6912A , FDS6930A .

History: SML120B8 | RTL035N03FRA | STP45NE06FP

 

 
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