All MOSFET. FDS6680 Datasheet

 

FDS6680 Datasheet and Replacement


   Type Designator: FDS6680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SO8
 

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FDS6680 Datasheet (PDF)

 ..1. Size:107K  fairchild semi
fds6680.pdf pdf_icon

FDS6680

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

 0.1. Size:102K  fairchild semi
fds6680a.pdf pdf_icon

FDS6680

November 2004 FDS6680A Single N-Channel, Logic Level, PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 12.5 A, 30 V RDS(ON) = 9.5 m @ VGS = 10 V using Fairchild Semiconductors advanced Power RDS(ON) = 13 m @ VGS = 4.5 V Trench process that has been especially tailored to minimize the on-state resistance and yet maint

 0.2. Size:84K  fairchild semi
fds6680s.pdf pdf_icon

FDS6680

April 1998 FDS6680 Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET has been designed11.5 A, 30 V. RDS(ON) = 0.010 @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 0.015 @ VGS = 4.5 V.converters using either synchronous or conventional switching PWM controllers. O

 0.3. Size:982K  fairchild semi
fds6680as.pdf pdf_icon

FDS6680

May 2008 tmFDS6680AS 30V N-Channel PowerTrench SyncFETGeneral Description Features The FDS6680AS is designed to replace a single SO-8 11.5 A, 30 V. RDS(ON) max= 10.0 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 12.5 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Datasheet: FDS6570A , FDS6575 , FDS6576 , FDS6612A , FDS6614A , FDS6630A , FDS6670A , FDS6675 , TK10A60D , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , FDS6912A , FDS6930A .

Keywords - FDS6680 MOSFET datasheet

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