MTH40N06 Todos los transistores

 

MTH40N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MTH40N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 300 nS
   Cossⓘ - Capacitancia de salida: 2500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO218

 Búsqueda de reemplazo de MOSFET MTH40N06

 

MTH40N06 Datasheet (PDF)

 0.1. Size:490K  st
mth40n06-fi.pdf

MTH40N06
MTH40N06

 9.1. Size:479K  1
dmth4007lps-13.pdf

MTH40N06
MTH40N06

DMTH4007LPS Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi

 9.2. Size:392K  diodes
dmth4005sk3.pdf

MTH40N06
MTH40N06

GreenDMTH4005SK3 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) max TC = +25C Environments 100% Unclamped Inductive Switching ensures more reliable 40V 95A 4.5m @ VGS = 10V and robust end application Low RDS(ON) minimizes power losses Low

 9.3. Size:450K  diodes
dmth4004lk3.pdf

MTH40N06
MTH40N06

DMTH4004LK3 Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to 175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and 3m @ VGS = 10V 100A Robust End Application 40V 5m @ VGS = 4.5V 100A Low Rdson

 9.4. Size:416K  diodes
dmth4005sct.pdf

MTH40N06
MTH40N06

DMTH4005SCT 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) Max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable 40V 4.7m @ VGS = 10V 100A and Robust End Application Low Input Capacitance Low Input/Output Leakage

 9.5. Size:695K  diodes
dmth4004sctb.pdf

MTH40N06
MTH40N06

GreenDMTH4004SCTB 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID Environments BVDSS RDS(ON) max TC = +25C 100% Unclamped Inductive Switching Ensures More Reliable (Note 9) and Robust End Application 40V 3m @ VGS = 10V 100A Low RDS(ON) Minimizes Power Losses

 9.6. Size:479K  diodes
dmth4007lps.pdf

MTH40N06
MTH40N06

DMTH4007LPS Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi

 9.7. Size:562K  diodes
dmth4007lk3.pdf

MTH40N06
MTH40N06

GreenDMTH4007LK3 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low RDS(ON) Ensures On State Losses are Minimized ID Max BVDSS RDS(ON) Max TC = +25C Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC-DC Converters 7.3m @ VGS = 10V 70A 40V Small Form Factor Thermally Efficient Package Enables Higher 9.8m @

 9.8. Size:260K  inchange semiconductor
dmth4005sct.pdf

MTH40N06
MTH40N06

isc N-Channel MOSFET Transistor DMTH4005SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 9.9. Size:254K  inchange semiconductor
dmth4004sctb.pdf

MTH40N06
MTH40N06

isc N-Channel MOSFET Transistor DMTH4004SCTBFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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History: SMOS44N50

 

 
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History: SMOS44N50

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