MTH40N06 Specs and Replacement
Type Designator: MTH40N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 300 nS
Cossⓘ - Output Capacitance: 2500 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: TO218
MTH40N06 substitution
- MOSFET ⓘ Cross-Reference Search
MTH40N06 datasheet
dmth4007lps-13.pdf
DMTH4007LPS Green 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package Cooler Running Applications BVDSS RDS(ON) Max TC = +25 C High Conversion Efficiency 100A 6.5m @ VGS = 10V Low RDS(ON) Minimizes On-State Losses 40V 9.8m @ VGS = 4.5V 80A Low Input Capacitance Fast Swi... See More ⇒
dmth4005sk3.pdf
Green DMTH4005SK3 40V +175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features C ID Rated to +175 Ideal for High Ambient Temperature BVDSS RDS(ON) max TC = +25 C Environments 100% Unclamped Inductive Switching ensures more reliable 40V 95A 4.5m @ VGS = 10V and robust end application Low RDS(ON) minimizes power losses Low... See More ⇒
dmth4004lk3.pdf
DMTH4004LK3 Green 40V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Rated to 175 C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25 C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and 3m @ VGS = 10V 100A Robust End Application 40V 5m @ VGS = 4.5V 100A Low Rdson ... See More ⇒
Detailed specifications: IRFP152FI, IRFP153FI, IRFP451FI, IRFP452FI, IRFP453FI, IRFZ20FI, IRFZ22FI, MTH6N60FI, 20N50, MTH40N06FI, MTP15N05L, MTP15N05LFI, MTP15N06L, MTP15N06LFI, MTP3055A, MTP3055AFI, SGS30MA050D1
Keywords - MTH40N06 MOSFET specs
MTH40N06 cross reference
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MTH40N06 substitution
MTH40N06 replacement
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