SGS100MA010D1 Todos los transistores

 

SGS100MA010D1 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SGS100MA010D1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 400 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 4200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: TO240

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SGS100MA010D1 datasheet

 ..1. Size:336K  st
sgs100ma010d1.pdf pdf_icon

SGS100MA010D1

 9.1. Size:597K  1
sgs10n60ruf.pdf pdf_icon

SGS100MA010D1

April 2001 IGBT SGS10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A d

 9.2. Size:617K  fairchild semi
sgs10n60rufd.pdf pdf_icon

SGS100MA010D1

April 2001 IGBT SGS10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series i

Otros transistores... MTP15N05L , MTP15N05LFI , MTP15N06L , MTP15N06LFI , MTP3055A , MTP3055AFI , SGS30MA050D1 , SGS35MA050D1 , IRFB31N20D , SGS150MA010D1 , SGSP201 , SGSP222 , SGSP230 , SGSP239 , SGSP301 , SGSP311 , SGSP316 .

History: CM10N60AFZ | AO3494 | SGSP311 | SI4410DY-T1 | MTD20N06HDLT4G | SMK1350F | AGM612MBP

 

 

 

 

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