SGS100MA010D1 Todos los transistores

 

SGS100MA010D1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SGS100MA010D1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 400 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 4200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO240
 

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SGS100MA010D1 Datasheet (PDF)

 ..1. Size:336K  st
 sgs100ma010d1.pdf pdf_icon

SGS100MA010D1

 9.1. Size:597K  1
 sgs10n60ruf.pdf pdf_icon

SGS100MA010D1

April 2001 IGBTSGS10N60RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100C, VGE = 15V(IGBTs) provide low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10Ad

 9.2. Size:617K  fairchild semi
 sgs10n60rufd.pdf pdf_icon

SGS100MA010D1

April 2001 IGBTSGS10N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10Aseries i

Otros transistores... MTP15N05L , MTP15N05LFI , MTP15N06L , MTP15N06LFI , MTP3055A , MTP3055AFI , SGS30MA050D1 , SGS35MA050D1 , IRFZ46N , SGS150MA010D1 , SGSP201 , SGSP222 , SGSP230 , SGSP239 , SGSP301 , SGSP311 , SGSP316 .

History: 4N80L-TF3-T | JCS15N65FEI | AP4501AGEM-HF | AP05N50EJ | AP9685GM | SFQ030N80C2 | SFP350N100C2

 

 
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