All MOSFET. SGS100MA010D1 Datasheet

 

SGS100MA010D1 Datasheet and Replacement


   Type Designator: SGS100MA010D1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 400 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 4200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO240
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SGS100MA010D1 Datasheet (PDF)

 ..1. Size:336K  st
 sgs100ma010d1.pdf pdf_icon

SGS100MA010D1

 9.1. Size:597K  1
 sgs10n60ruf.pdf pdf_icon

SGS100MA010D1

April 2001 IGBTSGS10N60RUFShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100C, VGE = 15V(IGBTs) provide low conduction and switching losses as High speed switchingwell as short circuit ruggedness. The RUF series is Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10Ad

 9.2. Size:617K  fairchild semi
 sgs10n60rufd.pdf pdf_icon

SGS100MA010D1

April 2001 IGBTSGS10N60RUFDShort Circuit Rated IGBTGeneral Description FeaturesFairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100C, VGE = 15VTransistors (IGBTs) provide low conduction and switching High speed switchinglosses as well as short circuit ruggedness. The RUFD Low saturation voltage : VCE(sat) = 2.2 V @ IC = 10Aseries i

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: PDN2311S | IRLU9343PBF | 2SK3437 | 2N7380 | IXFK44N50 | VST012N06MS | 15NM70L-TF34-T

Keywords - SGS100MA010D1 MOSFET datasheet

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