SGS100MA010D1 Specs and Replacement
Type Designator: SGS100MA010D1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 400 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 4200 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO240
SGS100MA010D1 substitution
- MOSFET ⓘ Cross-Reference Search
SGS100MA010D1 datasheet
sgs10n60ruf.pdf
April 2001 IGBT SGS10N60RUF Short Circuit Rated IGBT General Description Features Fairchild's RUF series of Insulated Gate Bipolar Transistors Short circuit rated 10us @ TC = 100 C, VGE = 15V (IGBTs) provide low conduction and switching losses as High speed switching well as short circuit ruggedness. The RUF series is Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A d... See More ⇒
sgs10n60rufd.pdf
April 2001 IGBT SGS10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Short circuit rated 10us @ TC = 100 C, VGE = 15V Transistors (IGBTs) provide low conduction and switching High speed switching losses as well as short circuit ruggedness. The RUFD Low saturation voltage VCE(sat) = 2.2 V @ IC = 10A series i... See More ⇒
Detailed specifications: MTP15N05L, MTP15N05LFI, MTP15N06L, MTP15N06LFI, MTP3055A, MTP3055AFI, SGS30MA050D1, SGS35MA050D1, IRFB31N20D, SGS150MA010D1, SGSP201, SGSP222, SGSP230, SGSP239, SGSP301, SGSP311, SGSP316
Keywords - SGS100MA010D1 MOSFET specs
SGS100MA010D1 cross reference
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SGS100MA010D1 substitution
SGS100MA010D1 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AGM404A
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