FDS6912A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS6912A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET FDS6912A
FDS6912A Datasheet (PDF)
fds6912a.pdf
July 2003FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switchi
fds6912a.pdf
FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing ON Semiconductors advanced RDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speedsupe
fds6912.pdf
July 2000FDS6912Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.042 @ VGS = 4.5 V.DC/DC converters using either synchronous or Optimized for use in switc
fds6911.pdf
March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedrDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist
fds6910.pdf
September 2004 FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETGeneral Description Features These N-Channel Logic Level MOSFETs are produced 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedRDS(ON) = 17 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and
fds6911.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fds6910.pdf
FDS6910 Dual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 7.5 A, 30 V. RDS(ON) = 13 m @ VGS = 10 V RDS(ON) = 17 m @ VGS = 4.5 VThese N-Channel Logic Level MOSFETs are produced Fast switching speedusing ON Semiconductors advancedPowerTrench process that has been especially tailored Low gate chargeto minimize the o
Otros transistores... FDS6675 , FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , 18N50 , FDS6930A , FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A , FDS8934A .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918