Справочник MOSFET. FDS6912A

 

FDS6912A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDS6912A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: SO8
     - подбор MOSFET транзистора по параметрам

 

FDS6912A Datasheet (PDF)

 ..1. Size:120K  fairchild semi
fds6912a.pdfpdf_icon

FDS6912A

July 2003FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing Fairchild Semiconductors advancedRDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailoredto minimize the on-state resistance and yet maintain Fast switchi

 ..2. Size:182K  onsemi
fds6912a.pdfpdf_icon

FDS6912A

FDS6912ADual N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 Vusing ON Semiconductors advanced RDS(ON) = 35 m @ VGS = 4.5 VPowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speedsupe

 7.1. Size:75K  fairchild semi
fds6912.pdfpdf_icon

FDS6912A

July 2000FDS6912Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFETGeneral Description FeaturesThese N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.042 @ VGS = 4.5 V.DC/DC converters using either synchronous or Optimized for use in switc

 8.1. Size:110K  fairchild semi
fds6911.pdfpdf_icon

FDS6912A

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductors advancedrDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

Другие MOSFET... FDS6675 , FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , AON7506 , FDS6930A , FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A , FDS8934A .

History: NTD4910N | F5020 | MRF184S | APT50M65LLLG | NTHS5402T1 | FDMQ8203 | IXFP18N65X2

 

 
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