FDS6912A. Аналоги и основные параметры

Наименование производителя: FDS6912A

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm

Тип корпуса: SO8

Аналог (замена) для FDS6912A

- подборⓘ MOSFET транзистора по параметрам

 

FDS6912A даташит

 ..1. Size:120K  fairchild semi
fds6912a.pdfpdf_icon

FDS6912A

July 2003 FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using Fairchild Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switchi

 ..2. Size:182K  onsemi
fds6912a.pdfpdf_icon

FDS6912A

FDS6912A Dual N-Channel Logic Level PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced 6 A, 30 V. RDS(ON) = 28 m @ VGS = 10 V using ON Semiconductor s advanced RDS(ON) = 35 m @ VGS = 4.5 V PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain Fast switching speed supe

 7.1. Size:75K  fairchild semi
fds6912.pdfpdf_icon

FDS6912A

July 2000 FDS6912 Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET General Description Features These N-Channel Logic Level MOSFETs have been 6 A, 30 V. RDS(ON) = 0.028 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.042 @ VGS = 4.5 V. DC/DC converters using either synchronous or Optimized for use in switc

 8.1. Size:110K  fairchild semi
fds6911.pdfpdf_icon

FDS6912A

March 2006 FDS6911 Dual N-Channel Logic Level PowerTrench MOSFET 20V, 7.5A, 13m General Description Features These N-Channel Logic Level MOSFETs are produced rDS(on) = 13 m @ VGS = 10 V using Fairchild Semiconductor s advanced rDS(on) = 17 m @ VGS = 4.5 V PowerTrench process that has been especially tailored Fast switching speed to minimize the on-state resist

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