FDS6930A Todos los transistores

 ..1. Size:63K  fairchild semi
 fds6930a.pdf

October 1998 FDS6930A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features 5.5 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 V These N-Channel Logic Level MOSFETs are RDS(ON) = 0.055 @ VGS = 4.5 V. produced using Fairchild Semiconductor's advanced PowerTrench process that has been Fast switching speed. especially tailored to minimize the on-state Low gate cha

 7.1. Size:193K  fairchild semi
 fds6930b.pdf

March 2010 FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced using RDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance Fast switching speed and y

 7.2. Size:537K  onsemi
 fds6930b.pdf

June 2005 FDS6930B Dual N-Channel Logic Level PowerTrench MOSFET Features General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced using RDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance Fast switching speed and ye

 7.3. Size:1521K  kexin
 fds6930b.pdf

SMD Type MOSFET Dual N-Channel MOSFET FDS6930B (KDS6930B) SOP-8 Unit mm Features VDS (V) = 30V ID = 5.5 A (VGS = 10V) RDS(ON) 38m (VGS = 10V) 1.50 0.15 RDS(ON) 50m (VGS = 4.5V) Fast switching speed 1 S2 5 D1 6 D1 2 G2 High power and current handling capability 7 D2 3 S1 8 D2 4 G1 5 4 6 3 7 2 8 1 Absolute Maximum Ratings Ta