October 1998FDS6930ADual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features5.5 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 VThese N-Channel Logic Level MOSFETs areRDS(ON) = 0.055 @ VGS = 4.5 V.produced using Fairchild Semiconductor'sadvanced PowerTrench process that has beenFast switching speed.especially tailored to minimize the on-stateLow gate cha

March 2010FDS6930BDual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced usingRDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench process thathas been especially tailored to minimize the on-state resistance Fast switching speedand y

June 2005FDS6930BDual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced usingRDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench process thathas been especially tailored to minimize the on-state resistance Fast switching speedand ye

SMD Type MOSFETDual N-Channel MOSFETFDS6930B (KDS6930B)SOP-8 Unit:mm Features VDS (V) = 30V ID = 5.5 A (VGS = 10V) RDS(ON) 38m (VGS = 10V) 1.50 0.15 RDS(ON) 50m (VGS = 4.5V) Fast switching speed1 S2 5 D1 6 D12 G2 High power and current handling capability7 D23 S18 D24 G15 46 37 28 1 Absolute Maximum Ratings Ta