Справочник MOSFET. FDS6930A

 

FDS6930A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDS6930A
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
   Тип корпуса: SO8

 Аналог (замена) для FDS6930A

 

 

FDS6930A Datasheet (PDF)

 ..1. Size:63K  fairchild semi
fds6930a.pdf

FDS6930A
FDS6930A

October 1998FDS6930ADual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features5.5 A, 30 V. RDS(ON) = 0.040 @ VGS = 10 VThese N-Channel Logic Level MOSFETs areRDS(ON) = 0.055 @ VGS = 4.5 V.produced using Fairchild Semiconductor'sadvanced PowerTrench process that has beenFast switching speed.especially tailored to minimize the on-stateLow gate cha

 7.1. Size:193K  fairchild semi
fds6930b.pdf

FDS6930A
FDS6930A

March 2010FDS6930BDual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced usingRDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench process thathas been especially tailored to minimize the on-state resistance Fast switching speedand y

 7.2. Size:537K  onsemi
fds6930b.pdf

FDS6930A
FDS6930A

June 2005FDS6930BDual N-Channel Logic Level PowerTrench MOSFETFeatures General Description 5.5 A, 30 V. RDS(ON) = 38 m @ VGS = 10 V These N-Channel Logic Level MOSFETs are produced usingRDS(ON) = 50 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench process thathas been especially tailored to minimize the on-state resistance Fast switching speedand ye

 7.3. Size:1521K  kexin
fds6930b.pdf

FDS6930A
FDS6930A

SMD Type MOSFETDual N-Channel MOSFETFDS6930B (KDS6930B)SOP-8 Unit:mm Features VDS (V) = 30V ID = 5.5 A (VGS = 10V) RDS(ON) 38m (VGS = 10V) 1.50 0.15 RDS(ON) 50m (VGS = 4.5V) Fast switching speed1 S2 5 D1 6 D12 G2 High power and current handling capability7 D23 S18 D24 G15 46 37 28 1 Absolute Maximum Ratings Ta

Другие MOSFET... FDS6680 , FDS6680A , FDS6685 , FDS6690A , FDS6875 , FDS6890A , FDS6912 , FDS6912A , 5N60 , FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A , FDS8934A , FDS8936A .

 

 
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