2SJ590LS Todos los transistores

 ..1. Size:33K  sanyo
 2sj590 2sj590ls.pdf

Ordering number ENN7149 2SJ590LS P-Channel Silicon MOSFET 2SJ590LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SJ590LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Conditio

 9.1. Size:32K  sanyo
 2sj591ls.pdf

Ordering number ENN7150 2SJ591LS P-Channel Silicon MOSFET 2SJ591LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SJ591LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Conditio

 9.2. Size:31K  sanyo
 2sj594.pdf

Ordering number ENN6977 2SJ594 P-Channel Silicon MOSFET 2SJ594 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ594] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ594] 6.5 2.3

 9.3. Size:30K  sanyo
 2sj597.pdf

Ordering number ENN6670 2SJ597 P-Channel Silicon MOSFET 2SJ597 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ597] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ597] 6.5 2.3 5.0 0.5

 9.4. Size:29K  sanyo
 2sj596.pdf

Ordering number ENN6979 2SJ596 P-Channel Silicon MOSFET 2SJ596 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ596] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ596] 6.5 2.3

 9.5. Size:30K  sanyo
 2sj595.pdf

Ordering number ENN6978 2SJ595 P-Channel Silicon MOSFET 2SJ595 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ595] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ595] 6.5 2.3

 9.6. Size:153K  nec
 2sj598.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on

 9.7. Size:40K  nec
 2sj599.pdf

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ599 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ599 TO-251 2SJ599-Z TO-252 FEATURES Low on-state resistance RDS(on)1 = 75 m MAX. (VGS = 10 V, ID = 10 A)

 9.8. Size:121K  tysemi
 2sj599.pdf

SMD Type SMD Type SMD Type SMD Type Product specification 2SJ599 Features TO-252 Low on-resistance Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 RDS(on)1 =75m MAX. (VGS =-10 V, ID =-10A) 5.30+0.2 0.50+0.8 -0.2 -0.7 RDS(on)2 = 110 m MAX. (VGS =-4.0V, ID =-10 A) Low Ciss Ciss = 1300 pF TYP. Built-in gate protection diode 0.127 0.80+0.1 max -0.1 1Gate +0.1 2.3 0.60-0.1 2Drain 4.6

 9.9. Size:1671K  kexin
 2sj598-z.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ598-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) =-60V ID =-12 A 0.127 RDS(ON) 130m (VGS =-10V) +0.1 0.80-0.1 max RDS(ON) 190m (VGS =-4V) Low Ciss Ciss = 720 pF (TYP.) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain Drain 3 Source Bod

 9.10. Size:951K  kexin
 2sj599-z.pdf

SMD Type MOSFET P-Channel MOSFET 2SJ599-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) =-60V ID =-20A 0.127 RDS(ON) 75m (VGS =-10V) +0.1 0.80-0.1 max RDS(ON) 111m (VGS =-4V) Low Ciss Ciss = 1300 pF (TYP.) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source Drain Body

 9.11. Size:831K  cn vbsemi
 2sj598-z-e1.pdf

2SJ598-Z-E1 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S

 9.12. Size:255K  inchange semiconductor
 2sj598.pdf

isc P-Channel MOSFET Transistor 2SJ598 FEATURES Static drain-source on-resistance RDS(on) 130m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Built in gate protection diode ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -60 V DSS V