2SJ590LS Specs and Replacement
Type Designator: 2SJ590LS
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ -
Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
Package: TO220FI
- MOSFET ⓘ Cross-Reference Search
2SJ590LS datasheet
..1. Size:33K sanyo
2sj590 2sj590ls.pdf 
Ordering number ENN7149 2SJ590LS P-Channel Silicon MOSFET 2SJ590LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SJ590LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Conditio... See More ⇒
9.1. Size:32K sanyo
2sj591ls.pdf
Ordering number ENN7150 2SJ591LS P-Channel Silicon MOSFET 2SJ591LS DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2078C [2SJ591LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Gate 2 Drain 3 Source Specifications 2.55 2.55 Absolute Maximum Ratings at Ta=25 C SANYO TO-220FI(LS) Parameter Symbol Conditio... See More ⇒
9.2. Size:31K sanyo
2sj594.pdf
Ordering number ENN6977 2SJ594 P-Channel Silicon MOSFET 2SJ594 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ594] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ594] 6.5 2.3 ... See More ⇒
9.3. Size:30K sanyo
2sj597.pdf
Ordering number ENN6670 2SJ597 P-Channel Silicon MOSFET 2SJ597 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ597] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ597] 6.5 2.3 5.0 0.5 ... See More ⇒
9.4. Size:29K sanyo
2sj596.pdf
Ordering number ENN6979 2SJ596 P-Channel Silicon MOSFET 2SJ596 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ596] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ596] 6.5 2.3 ... See More ⇒
9.5. Size:30K sanyo
2sj595.pdf
Ordering number ENN6978 2SJ595 P-Channel Silicon MOSFET 2SJ595 DC / DC Converter Applications Preliminary Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SJ595] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SJ595] 6.5 2.3 ... See More ⇒
9.6. Size:153K nec
2sj598.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ598 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ598 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ598 TO-251 (MP-3) 2SJ598-Z TO-252 (MP-3Z) FEATURES Low on-state resistance RDS(on)1 = 130 m MAX. (VGS = 10 V, ID = 6 A) RDS(on... See More ⇒
9.7. Size:40K nec
2sj599.pdf
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ599 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ599 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ599 TO-251 2SJ599-Z TO-252 FEATURES Low on-state resistance RDS(on)1 = 75 m MAX. (VGS = 10 V, ID = 10 A) ... See More ⇒
9.8. Size:121K tysemi
2sj599.pdf
SMD Type SMD Type SMD Type SMD Type Product specification 2SJ599 Features TO-252 Low on-resistance Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 RDS(on)1 =75m MAX. (VGS =-10 V, ID =-10A) 5.30+0.2 0.50+0.8 -0.2 -0.7 RDS(on)2 = 110 m MAX. (VGS =-4.0V, ID =-10 A) Low Ciss Ciss = 1300 pF TYP. Built-in gate protection diode 0.127 0.80+0.1 max -0.1 1Gate +0.1 2.3 0.60-0.1 2Drain 4.6... See More ⇒
9.9. Size:1671K kexin
2sj598-z.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ598-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) =-60V ID =-12 A 0.127 RDS(ON) 130m (VGS =-10V) +0.1 0.80-0.1 max RDS(ON) 190m (VGS =-4V) Low Ciss Ciss = 720 pF (TYP.) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 2 Drain Drain 3 Source Bod... See More ⇒
9.10. Size:951K kexin
2sj599-z.pdf
SMD Type MOSFET P-Channel MOSFET 2SJ599-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features VDS (V) =-60V ID =-20A 0.127 RDS(ON) 75m (VGS =-10V) +0.1 0.80-0.1 max RDS(ON) 111m (VGS =-4V) Low Ciss Ciss = 1300 pF (TYP.) + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4.60 -0.15 2 Drain 3 Source Drain Body... See More ⇒
9.11. Size:831K cn vbsemi
2sj598-z-e1.pdf
2SJ598-Z-E1 www.VBsemi.tw P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 100 % UIS Tested 0.061 at VGS = - 10 V - 30 APPLICATIONS - 60 10 0.072 at VGS = - 4.5 V - 26 Load Switch S TO-252 G G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter S... See More ⇒
9.12. Size:255K inchange semiconductor
2sj598.pdf
isc P-Channel MOSFET Transistor 2SJ598 FEATURES Static drain-source on-resistance RDS(on) 130m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Built in gate protection diode ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage -60 V DSS V ... See More ⇒
Detailed specifications: 2SJ387, 2SJ399, 2SJ451, 2SJ48, 2SJ49, 2SJ50, 2SJ574, 2SJ576, 5N60, 2SJ601, 2SJ601Z, 2SJ74, 2SK1016, 2SK1082, 2SK1086, 2SK1093, 2SK1094
Keywords - 2SJ590LS MOSFET specs
2SJ590LS cross reference
2SJ590LS equivalent finder
2SJ590LS pdf lookup
2SJ590LS substitution
2SJ590LS replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
