2SK1086 Todos los transistores

 ..1. Size:143K  fuji
 2sk1086.pdf

 8.1. Size:165K  fuji
 2sk1081-01.pdf

 8.2. Size:183K  fuji
 2sk1089.pdf

N-channel MOS-FET 2SK1089 F-III Series 60V 0,035 35A 80W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 8.3. Size:175K  fuji
 2sk1085-m.pdf

N-channel MOS-FET 2SK1085-M F-III Series 150V 0,9 3A 20W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C),

 8.4. Size:1246K  fuji
 2sk1082.pdf

 8.5. Size:163K  fuji
 2sk1082-01.pdf

 8.6. Size:203K  inchange semiconductor
 2sk1081.pdf

isc N-Channel MOSFET Transistor 2SK1081 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 8

 8.7. Size:200K  inchange semiconductor
 2sk1085-m.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1085-M FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 8.8. Size:203K  inchange semiconductor
 2sk1082.pdf

isc N-Channel MOSFET Transistor 2SK1082 DESCRIPTION Drain Current I =6A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 9