Справочник MOSFET. 2SK1086

 

2SK1086 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1086
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 35 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 300 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.05 Ohm
   Тип корпуса: SC67

 Аналог (замена) для 2SK1086

 

 

2SK1086 Datasheet (PDF)

 ..1. Size:143K  fuji
2sk1086.pdf

2SK1086
2SK1086

 8.1. Size:165K  fuji
2sk1081-01.pdf

2SK1086
2SK1086

 8.2. Size:183K  fuji
2sk1089.pdf

2SK1086
2SK1086

N-channel MOS-FET2SK1089F-III Series 60V 0,035 35A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 8.3. Size:175K  fuji
2sk1085-m.pdf

2SK1086
2SK1086

N-channel MOS-FET2SK1085-MF-III Series 150V 0,9 3A 20W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 8.4. Size:1246K  fuji
2sk1082.pdf

2SK1086
2SK1086

 8.5. Size:163K  fuji
2sk1082-01.pdf

2SK1086
2SK1086

 8.6. Size:203K  inchange semiconductor
2sk1081.pdf

2SK1086
2SK1086

isc N-Channel MOSFET Transistor 2SK1081DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 8

 8.7. Size:200K  inchange semiconductor
2sk1085-m.pdf

2SK1086
2SK1086

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1085-MFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.8. Size:203K  inchange semiconductor
2sk1082.pdf

2SK1086
2SK1086

isc N-Channel MOSFET Transistor 2SK1082DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 9

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