2SK1270 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1270
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 10 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 70 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Encapsulados: TO126
Búsqueda de reemplazo de 2SK1270 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK1270 datasheet
8.5. Size:200K fuji
2sk1279.pdf 
N-channel MOS-FET 2SK1279 F-V Series 500V 0,58 15A 125W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500
8.6. Size:189K fuji
2sk1278.pdf
N-channel MOS-FET 2SK1278 F-V Series 500V 1,1 10A 100W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500 V
8.7. Size:206K fuji
2sk1277.pdf
N-channel MOS-FET 2SK1277 F-V Series 250V 0,12 30A 150W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 250
8.9. Size:1350K kexin
2sk1273.pdf
SMD Type MOSFET N-Channel MOSFET 2SK1273 1.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2 A Pulse
8.10. Size:203K inchange semiconductor
2sk1279.pdf
isc N-Channel MOSFET Transistor 2SK1279 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V
8.11. Size:203K inchange semiconductor
2sk1278.pdf
isc N-Channel MOSFET Transistor 2SK1278 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V
8.12. Size:203K inchange semiconductor
2sk1277.pdf
isc N-Channel MOSFET Transistor 2SK1277 DESCRIPTION Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =0)
Otros transistores... 2SK1118
, 2SK1153
, 2SK1154
, 2SK1157
, 2SK1161
, 2SK1165
, 2SK1166
, 2SK1215
, IRLB3034
, 2SK1277
, 2SK1278
, 2SK1279
, 2SK1296
, 2SK1310
, 2SK1315S
, 2SK133
, 2SK134
.
History: AOK42S60L
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