2SK1270
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK1270
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 10
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 2
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 12
ns
Cossⓘ - Выходная емкость: 70
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.3
Ohm
Тип корпуса:
TO126
- подбор MOSFET транзистора по параметрам
2SK1270
Datasheet (PDF)
8.5. Size:200K fuji
2sk1279.pdf 
N-channel MOS-FET2SK1279F-V Series 500V 0,58 15A 125W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500
8.6. Size:189K fuji
2sk1278.pdf 
N-channel MOS-FET2SK1278F-V Series 500V 1,1 10A 100W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500 V
8.7. Size:206K fuji
2sk1277.pdf 
N-channel MOS-FET2SK1277F-V Series 250V 0,12 30A 150W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 250
8.9. Size:1350K kexin
2sk1273.pdf 
SMD Type MOSFETN-Channel MOSFET2SK12731.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2A Pulse
8.10. Size:203K inchange semiconductor
2sk1279.pdf 
isc N-Channel MOSFET Transistor 2SK1279DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
8.11. Size:203K inchange semiconductor
2sk1278.pdf 
isc N-Channel MOSFET Transistor 2SK1278DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
8.12. Size:203K inchange semiconductor
2sk1277.pdf 
isc N-Channel MOSFET Transistor 2SK1277DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0)
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: PDEC3907Z
| H7N0405LM
| MTB1D7N03ATH8
| 2SK610
| 2SK2525-01
| AP55T10GH-HF
| AOD522
