2SK1270
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK1270
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 10
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 2
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 12
ns
Cossⓘ - Выходная емкость: 70
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.3
Ohm
Тип корпуса:
TO126
Аналог (замена) для 2SK1270
-
подбор ⓘ MOSFET транзистора по параметрам
2SK1270
Datasheet (PDF)
8.5. Size:200K fuji
2sk1279.pdf 
N-channel MOS-FET2SK1279F-V Series 500V 0,58 15A 125W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500
8.6. Size:189K fuji
2sk1278.pdf 
N-channel MOS-FET2SK1278F-V Series 500V 1,1 10A 100W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500 V
8.7. Size:206K fuji
2sk1277.pdf 
N-channel MOS-FET2SK1277F-V Series 250V 0,12 30A 150W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 250
8.9. Size:1350K kexin
2sk1273.pdf 
SMD Type MOSFETN-Channel MOSFET2SK12731.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2A Pulse
8.10. Size:203K inchange semiconductor
2sk1279.pdf 
isc N-Channel MOSFET Transistor 2SK1279DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
8.11. Size:203K inchange semiconductor
2sk1278.pdf 
isc N-Channel MOSFET Transistor 2SK1278DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
8.12. Size:203K inchange semiconductor
2sk1277.pdf 
isc N-Channel MOSFET Transistor 2SK1277DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0)
Другие MOSFET... 2SK1118
, 2SK1153
, 2SK1154
, 2SK1157
, 2SK1161
, 2SK1165
, 2SK1166
, 2SK1215
, 60N06
, 2SK1277
, 2SK1278
, 2SK1279
, 2SK1296
, 2SK1310
, 2SK1315S
, 2SK133
, 2SK134
.
History: 7N65KL-TF3T-T
| RSD201N10
| HTN020N04P
| WFU1N60
| AOB66935L
| BUK7225-55A
