2SK1277 Todos los transistores

 ..1. Size:206K  fuji
 2sk1277.pdf

N-channel MOS-FET 2SK1277 F-V Series 250V 0,12 30A 150W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 250

 ..2. Size:203K  inchange semiconductor
 2sk1277.pdf

isc N-Channel MOSFET Transistor 2SK1277 DESCRIPTION Drain Current I = 30A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =0)

 8.1. Size:355K  nec
 2sk1273.pdf

 8.2. Size:436K  nec
 2sk1274.pdf

 8.3. Size:401K  nec
 2sk1272.pdf

 8.4. Size:342K  nec
 2sk1271.pdf

 8.5. Size:200K  fuji
 2sk1279.pdf

N-channel MOS-FET 2SK1279 F-V Series 500V 0,58 15A 125W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500

 8.6. Size:189K  fuji
 2sk1278.pdf

N-channel MOS-FET 2SK1278 F-V Series 500V 1,1 10A 100W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25 C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500 V

 8.7. Size:270K  hitachi
 2sk1275.pdf

 8.8. Size:216K  hitachi
 2sk1270.pdf

 8.9. Size:1350K  kexin
 2sk1273.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1273 1.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2 A Pulse

 8.10. Size:203K  inchange semiconductor
 2sk1279.pdf

isc N-Channel MOSFET Transistor 2SK1279 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V

 8.11. Size:203K  inchange semiconductor
 2sk1278.pdf

isc N-Channel MOSFET Transistor 2SK1278 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V