2SK1277 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1277
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 150 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 140 ns
Cossⓘ - Выходная емкость: 500 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: TO3P
2SK1277 Datasheet (PDF)
2sk1277.pdf
N-channel MOS-FET2SK1277F-V Series 250V 0,12 30A 150W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 250
2sk1277.pdf
isc N-Channel MOSFET Transistor 2SK1277DESCRIPTIONDrain Current I = 30A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =0)
2sk1279.pdf
N-channel MOS-FET2SK1279F-V Series 500V 0,58 15A 125W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500
2sk1278.pdf
N-channel MOS-FET2SK1278F-V Series 500V 1,1 10A 100W> Features > Outline Drawing- Include Fast Recovery Diode- High Voltage- Low Driving Power> Applications- Motor Control- Inverters- Choppers> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), unless otherwise specifiedItem Symbol Rating UnitDrain-Source-Voltage V 500 V
2sk1273.pdf
SMD Type MOSFETN-Channel MOSFET2SK12731.70 0.1 Features VDS (V) = 60V ID = 2 A 0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 0.65 (VGS = 10V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 60V Gate-Source Voltage VGS 20 Continuous Drain Current ID 2A Pulse
2sk1279.pdf
isc N-Channel MOSFET Transistor 2SK1279DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
2sk1278.pdf
isc N-Channel MOSFET Transistor 2SK1278DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV
Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918