2SK1618S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1618S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.8 Ohm
Paquete / Cubierta: LDPAK
Búsqueda de reemplazo de 2SK1618S MOSFET
2SK1618S Datasheet (PDF)
2sk1618.pdf

2SK1618(L), 2SK1618(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1618(L), 2SK1618(S)Absolute Maximum Rating
2sk161.pdf

2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications Unit: mm VHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Y | = 9 mS (typ.) fs Extremely low reverse transfer capacitance: C = 0.1 pF (typ.) rssMaximum Ratings (Ta == 25C) ==Characteris
2sk1614.pdf

Power F-MOS FETs 2SK16142SK1614Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS, 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1 0
2sk1613.pdf

Power F-MOS FETs 2SK16132SK1613Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1
Otros transistores... 2SK1540L , 2SK1540S , 2SK1566 , 2SK1567 , 2SK1579 , 2SK161 , 2SK1611 , 2SK1618L , IRFB4227 , 2SK1620S , 2SK1620L , 2SK1628 , 2SK1636L , 2SK1636S , 2SK1667 , 2SK1668 , 2SK1669 .
History: MTW33N10E | DMP2170U | FQD3P20TF | AO3403 | IXFH50N85X | BUK9629-100B | CEZ3R04
History: MTW33N10E | DMP2170U | FQD3P20TF | AO3403 | IXFH50N85X | BUK9629-100B | CEZ3R04



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