2SK1618S
MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1618S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 30
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.8
Ohm
Package:
LDPAK
2SK1618S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1618S
Datasheet (PDF)
7.1. Size:34K hitachi
2sk1618.pdf 
2SK1618(L), 2SK1618(S)Silicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineLDPAK44123123DG1. Gate2. Drain3. SourceS4. Drain2SK1618(L), 2SK1618(S)Absolute Maximum Rating
8.1. Size:366K toshiba
2sk161.pdf
2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications Unit: mm VHF Band Amplifier Applications Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance: |Y | = 9 mS (typ.) fs Extremely low reverse transfer capacitance: C = 0.1 pF (typ.) rssMaximum Ratings (Ta == 25C) ==Characteris
8.2. Size:36K panasonic
2sk1614.pdf
Power F-MOS FETs 2SK16142SK1614Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS, 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1 0
8.3. Size:36K panasonic
2sk1613.pdf
Power F-MOS FETs 2SK16132SK1613Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1
8.4. Size:36K panasonic
2sk1612.pdf
Power F-MOS FETs 2SK16122SK1612Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2 1.4 0.1For high-frequency power amplification+0.20.5 -0.10.8
8.5. Size:36K panasonic
2sk1611.pdf
Power F-MOS FETs 2SK16112SK1611Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator, AC adaptor) 1.3 0.2For high-frequency power amplification1.4 0.1+0.20
8.6. Size:36K panasonic
2sk1610.pdf
Power F-MOS FETs 2SK16102SK1610Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.5 10.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1
8.7. Size:217K inchange semiconductor
2sk1614.pdf
isc N-Channel MOSFET Transistor 2SK1614DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.8. Size:214K inchange semiconductor
2sk1613.pdf
isc N-Channel MOSFET Transistor 2SK1613DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.9. Size:207K inchange semiconductor
2sk1612.pdf
isc N-Channel MOSFET Transistor 2SK1612DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.10. Size:192K inchange semiconductor
2sk1611.pdf
isc N-Channel MOSFET Transistor 2SK1611DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI
8.11. Size:216K inchange semiconductor
2sk1610.pdf
isc N-Channel MOSFET Transistor 2SK1610DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX
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