FDS8947A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8947A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm

Encapsulados: SO8

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FDS8947A datasheet

 8.1. Size:539K  fairchild semi
 fds8949 f085.pdf pdf_icon

FDS8947A

February 2010 FDS8949_F085 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

 8.2. Size:345K  fairchild semi
 fds8949.pdf pdf_icon

FDS8947A

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

 8.3. Size:454K  onsemi
 fds8949-f085.pdf pdf_icon

FDS8947A

FDS8949-F085 Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using ON Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

 8.4. Size:345K  onsemi
 fds8949.pdf pdf_icon

FDS8947A

October 2006 FDS8949 tm Dual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29m Features General Description These N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10V using Fairchild Semiconductor s advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

MOSTRAR MÁS

Otros transistores... FDS6961A, FDS6975, FDS6982, FDS6990A, FDS8433A, FDS8926A, FDS8934A, FDS8936A, AON7506, FDS9412, FDS9435A, FDS9933A, FDS9936A, FDT439N, FDT457N, FDT459N, FDV301N