FDS8947A Todos los transistores

 

FDS8947A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDS8947A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
   Paquete / Cubierta: SO8
 

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FDS8947A Datasheet (PDF)

 8.1. Size:539K  fairchild semi
 fds8949 f085.pdf pdf_icon

FDS8947A

February 2010FDS8949_F085tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state

 8.2. Size:345K  fairchild semi
 fds8949.pdf pdf_icon

FDS8947A

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

 8.3. Size:454K  onsemi
 fds8949-f085.pdf pdf_icon

FDS8947A

FDS8949-F085Dual N-Channel Logic Level PowerTrench MOSFET40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing ON Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5VPowerTrench process that has been especially tailored Low gate charge to minimize the on-state resistance and yet mainta

 8.4. Size:345K  onsemi
 fds8949.pdf pdf_icon

FDS8947A

October 2006FDS8949tmDual N-Channel Logic Level PowerTrench MOSFET 40V, 6A, 29mFeatures General DescriptionThese N-Channel Logic Level MOSFETs are produced Max rDS(on) = 29m at VGS = 10Vusing Fairchild Semiconductors advanced Max rDS(on) = 36m at VGS = 4.5V PowerTrench process that has been especially tailored Low gate charge to minimize the on-state resist

MOSTRAR MÁS

Otros transistores... FDS6961A , FDS6975 , FDS6982 , FDS6990A , FDS8433A , FDS8926A , FDS8934A , FDS8936A , IRFP250 , FDS9412 , FDS9435A , FDS9933A , FDS9936A , FDT439N , FDT457N , FDT459N , FDV301N .

History: STE36N50 | 2SJ197 | 2SK1009-01 | IRFB41N15D | FDS3692

 

 
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